The electronic state around a single vacancy in silicon crystal is investigated by using the Green's function approach. The triply degenerate charge states are found to be widely extended and account for extremely large elastic softening at low temperature as observed in recent ultrasonic experiments. When we include the LS coupling As, on each Si atom, the 6-fold spin-orbital degeneracy for the V(+) state with the valence +1 and spin 1/2 splits into Gamma(7) doublet groundstates and Gamma(8) quartet excited states with a reduced excited energy of O(lambda(Si)/10). We also consider the effect of couplings between electrons and Jahn-Teller phonons in the dangling bonds within the second order perturbation and find that the groundstate becomes Gamma(8) quartet which is responsible for the magnetic-field suppression of the softening in B-doped silicon.