2006年1月
Thin-film phase of pentacene film formed on KCl by vacuum deposition
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
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- 巻
- 45
- 号
- 1B
- 開始ページ
- 401
- 終了ページ
- 404
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.45.401
- 出版者・発行元
- INST PURE APPLIED PHYSICS
On KCl substrates, vacuum-deposited pentacene films are found to exhibit the so-called thin-film phase with 1.54nm d-spacing perpendicular to the substrates when the film thickness is smaller than 30 nm. The films have in-plane unit cell sizes of a = 0.59 nm, b = 0.75 nm and Gamma =90 degrees, which are almost the same as the values reported previously for the thin-film phase on SiO2/Si. The pentacene films formed on KCl show good epitaxy being composed of monomolecular layers with an approximately 1.5 nm step height. These films are oriented in the two epitaxial angles of 0 and 32 degrees with respect to the a-axis of KCl. From the point-on-line epitaxy, a very small misfit value is found for the combination of the KCl(020) substrate and the thin-film phase (120) so that the a- or b-axes of the thin-film phase should orient makina an angle of 32 degrees from the a-axis of KCl, which explains exactly the observed 32 degrees orientation. However, the 0 degrees orientation can be explained not from the point-on-line epitaxy, but is suspected to be due to the nucleation controlled at surface steps along the a-axis of KCl.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.45.401
- ISSN : 0021-4922
- Web of Science ID : WOS:000235089100008