WAKAHARA Akihiro

J-GLOBAL         Last updated: Jun 18, 2019 at 20:50
 
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Name
WAKAHARA Akihiro
Affiliation
Toyohashi University of Technology
Section
Faculty of Engineering, Department of Electrical and Electronic Engineering
Job title
Professor
Degree
Dr of Engineering(Toyohashi University of Technology)

Research Areas

 
 

Academic & Professional Experience

 
Apr 2010
 - 
Today
Professor, Graduate School of Engineering, Toyohashi Univ. of Tech.
 
Apr 2005
 - 
Mar 2010
Professor, Faculty of Engineering, Toyohashi Univ. of Tech.
 
Aug 1997
 - 
Mar 2005
Associate Professor, Faculty of Engineering, Toyohashi Univ. of Tech.
 
Apr 1995
 - 
Jul 1997
Research Associate, Graduate School of Engineering, Kyoto University
 
Apr 1990
 - 
Mar 1995
Research Associate, Faculty of Engineering, Kyoto University
 

Education

 
 
 - 
1990
Graduate School, Division of Engineering, Toyohashi University of Technology
 
 
 - 
1985
Electrical and Electronic Engineering, Faculty of Engineering, Toyohashi University of Technology
 
 
 - 
Mar 1983
Department of Electronics, Ntional Institute of Technology, Kushiro College
 

Committee Memberships

 
2015
 - 
2016
IGNITE2016   Organizing Committee
 
2014
 - 
2016
The 18th International Conference on Crystal Growth and Epitaxy  Steering Committee (Treasurer)
 
2014
 - 
2015
The 6th International Symposium on Growth of III-Nitride  Local Committee
 
2014
 - 
2015
ISPLasma2015  Chair, Editorial Committee for Special Issue
 
2014
 - 
2014
IGNITE (Int. Conf. of Global Network for Innovative Technology) 2014  Chair of Organizing Committee
 

Awards & Honors

 
Apr 2016
イオン注入技術を用いたプレーナ型GaN-LEDの作製, Poster Award, The Japan Society of Applied Physics
Winner: S.Kamizuki, K.Tsuchiyama, K.Yamane, H.Sekiguchi, H.Okada, A.Wakahara
 
共同受賞
Sep 2007
Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/Alloy Layers, JSAP Outstanding Paper Award, The Japan Society of Applied Physics
Winner: Y.Furukawa, A.Wakahara, h.Yonezu, S.Y.Moon, Y.Morisaki, M.Ishiji
 
共同受賞

Published Papers

 
Sekiguchi Hiroto, Sakai Masaru, Kamada Takuho, Yamane Keisuke, Okada Hiroshi, Wakahara Akihiro
JOURNAL OF APPLIED PHYSICS   125(17)    May 2019   [Refereed]
Piedra-Lorenzana Jose A., Yamane Keisuke, Shiota Koki, Fujimoto Junya, Tanaka Shunsuke, Sekiguchi Hiroto, Okada Hiroshi, Wakahara Akihiro
JOURNAL OF CRYSTAL GROWTH   512 37-40   Apr 2019   [Refereed]
Hiroto Sekiguchi, Kohei Date, Tomohiko Imanishi, Hiroki Tateishi, Keisuke Yamane, Hiroshi Okada, Katsumi Kishino, Akihiro Wakahara
Journal of Crystal Growth   511 73-78   Apr 2019   [Refereed]
Eu-doped GaN (GaN:Eu) is a good candidate for realizing red laser diodes with temperature stability. Nanocolumn crystals are useful for achieving a high optical gain by a high Eu concentration because they can suppress the degradation of crystalli...
Hiroto Sekiguchi, Yukimasa Higashi, Keisuke Yamane, Akihiro Wakahara, Hiroshi Okada, Katsumi Kishino
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   37(3) 031207   Apr 2019   [Refereed]
Nanocolumn light-emitting diodes (LEDs) are expected to achieve the monolithic integration of the three primary-color micro-LEDs for micro-LED displays. From the viewpoints of low cost and large-area substrates, a technology for the regular arrang...
Atsushi Sukegawa, Hiroto Sekiguchi,* Ryousuke Matsuzaki, Keisuke Yamane, Hiroshi Okada, Katsumi Kishino, and Akihiro Wakahara
Phys. Status Solidi A   216(1) 1800501   Jan 2019   [Refereed]
A.Wakahara, K.Yamane
OYO BUTSURI   87(7) 494-500   Jul 2018   [Refereed][Invited]
Keisuke Yamane, Shun Mugikura, Shunsuke Tanaka, Masaya Goto, Hiroto Sekiguchi, Hiroshi Okada, Hiroshi Okada, Akihiro Wakahara
Journal of Crystal Growth   486 24-29   Mar 2018   [Refereed]
This paper presents the impact of temperature and nitrogen-composition on the growth mode and crystallinity of GaAsPN alloys. Reflection high-energy electron diffraction results combined with transmission electron microscopy analysis revealed that...
Keisuke Yamane, Kento Sato, Hiroto Sekiguchi, Hiroshi Okada, Hiroshi Okada, Akihiro Wakahara, Akihiro Wakahara
Journal of Crystal Growth   473 55-59   Sep 2017   [Refereed]
This paper presents intentional doping of n- and p-type GaAs0.19P0.76N0.05 alloys by molecular beam epitaxy, followed by rapid thermal annealing (RTA). Sulfur and magnesium were respectively used as n- and p-type dopants. The carrier concentration...
Yamane Keisuke, Goto Masaya, Takahashi Kenjiro, Sato Kento, Sekiguchi Hiroto, Okada Hiroshi, Wakahara Akihiro
Applied Physics Express   10(7) 75504   Jul 2017   [Refereed]
Kazuki SHIOGAI, Naoki WADA, Akihiro WAKAHARA
Journal of Japanese Society for Engineerign Education   65(2) 56-61   Mar 2017   [Refereed]

Books etc

 
Akihiro Wakahara
オーム社   Oct 2009   ISBN:4274207811
プロフェッショナル英和辞書 スペッドテラ
堀内克明,蟹江幸博他編 (Part:Contributor, a to d)
小学館   Jul 2004   ISBN:9784095067117
New Functionality Materials Vol. A : Optical and Quantum-Structural Properties of Semiconductors(共著)
Elsevier Sci. Publ. BV.   1993   ISBN:0444816097
Alkyl-based group V OMVPE with atomic level controllability

Conference Activities & Talks

 
GaN-based Inverter by Monolithic Integration of Threshold Controlled MOSFETs
Hiroto Sekiguchi, Kiyomasa Miwa, Keisuke Yamane, Akihiro Wakahara, and Hiroshi Okada
The 46th International Symposium on Compound Semiconductor/ The 31st International Conference on Indium Phosphide and Related Materials (CSW 2019)   May 2019   
Demonstration of Germanium Doping to GaP-based Dilute Nitrides
Keisuke Yamane,*Shunsuke Tanaka, and Akihiro Wakahara
The 46th International Symposium on Compound Semiconductor/ The 31st International Conference on Indium Phosphide and Related Materials (CSW 2019)   May 2019   
Fabrication of neural optical probe using GaN-based blue mLED [Invited]
Hiroto Sekiguchi, Hiroki Yasunaga, Keisuke Yamane, Akihiro Wakahara
The 7th International Conference on Light-Emitting Devices and Their Industrial Applications   Apr 2019   
First-Principles Calculation of Annihilation Process of Nitrogen-Related Point Defect in dilute GaPN
WAKAHARA Akihiro
Y. Maki, K. Yamane, H. Sekiguchi, H. Okada, A. Wakahara   11 Mar 2019   
Nitride semiconductor device application of silicon dioxide by chemical vapor deposition enhanced by atomic oxygen at ground state extracted from a surface-wave generated plasma
M.Baba, Y.Kakiuchi, H.Okada, M.Furukawa, K.Yamane, H.Sekiguchi, A.Wakahara1
JSAP Spring Meeting 2019   11 Mar 2019   
Study of insulated gate GaN-based transistor using chemical vapor deposition method enhanced by atomic oxygen at the ground level
K. Nakamura, M. Baba, H. Okada, M. Furukawa, H. Sekiguchi, K. Yamane, A. Wakahara
JSAP Spring Meeting 2019   11 Mar 2019   
Fabrication of GaAsPN subcell toward monolithic III-V/Si multijunction solar cells
Toshiki Takachi, Keisuke Yamane, So Hikosaka, Junya Fujimoto, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara
JSAP Spring Meeting 2019   11 Mar 2019   
Design and fabrication of optical cavity by arranged GaN nanocolumns
T. Takagi, H. Sekiguchi, Y. Tamai, K. Yamane, H. Okada, K. Kishino, A. Wakahara
JSAP Spring Meeting 2019   11 Mar 2019   
Fabrication of regularly arranged Eu-doped GaN nanocolumns on AlN/Si substrate grown by RF-MBE
S. Fujiwara, H.Sekiguchi, A. Sukegawa, Y. Tamai, K. Yamane, H. Okada, K. Kishino, and A. Wakahara
JSAP Spring Meeting 2019   11 Mar 2019   
Investigation on Annihilation of Point Defects in III-V-N Alloys by Proton Irradiation
S. Genjo , K. Yamane , R. Futamura , M.Imaizumi , A. Wakahara
JSAP Spring meeting 2019   11 Mar 2019   

Research Grants & Projects

 
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(C))
Project Year: 2010 - 2012    Investigator(s): Hiroshi OKADA
Novel three-terminal light emitting device based-on rare-earth (Eu) implanted AlGaN/GaN high electron mobility transistor (HEMT) structure by ion-implantation process was investigated. In luminescence spectra by current injection of the fabricated...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(B))
Project Year: 2008 - 2012    Investigator(s): Masahiko KONDOW
III-N-V semiconductors, such as GaInNAs,are material systems of interest showing prospects for the next generation optical devices such as laser diodes. Due to the requirement of low growth temperature, the as-grown samples of III-N-V semiconducto...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(B))
Project Year: 2005 - 2007    Investigator(s): Akihiro WAKAHARA
In this work, we investigate optical properties of rare-earth contained group-III nitride alloy, called III-N-RE alloy, to clarify its potential for an active layer in a monolithic optoelectronic integrated circuits(OEICs) which is composed of Si/...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(特別推進研究)
Project Year: 2003 - 2005    Investigator(s): Hiroo YONEZU
Basic process technologies have been developed for realizing novel optoelectronic integrated systems in a single chip, in which optical devices and electronic circuits were combined. These technologies were based on the dislocation-free heteroepit...
Ministry of Education, Culture, Sports, Science and Technology: Grants-in-Aid for Scientific Research(基盤研究(B))
Project Year: 2001 - 2003    Investigator(s): Makoto ISHIDA
We proposed the use of an epitaxial γ-Al_2O_3 film as a buffer layer to form epitaxial PZT thin file and, epitaxial Pt films on Si substrates. The epitaxial γ-Al_2O_3 films were grown on a Si substrate using chemical vapor deposition (CVD) and the...

Social Contribution

 
One week IC Fabrication Training
[Lecturer, Planner, Demonstrator]  Toyohashi Tech. EIRIS  (Toyohashi Tech、EIIRIS)  Jul 1998 - Today