論文

査読有り
1996年7月

Fundamental study on powder-scattering in positive- and negative-ion implantation into powder materials

APPLIED SURFACE SCIENCE
  • H Tsuji
  • ,
  • J Ishikawa
  • ,
  • H Itoh
  • ,
  • Y Toyota
  • ,
  • Y Gotoh

100
開始ページ
342
終了ページ
346
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/0169-4332(96)00238-3
出版者・発行元
ELSEVIER SCIENCE BV

The scattering of powder particles is caused by charging in the ion implantation of positive ions into dielectric powders without a charge compensation, this makes dose control difficult. We have studied the particle-scattering phenomenon in ion implantation into spherical powders both theoretically and experimentally. Taking into account Coulomb force, Van der Waals force and a gravity working on a sphere, the force balance equation was driven to give the threshold charging voltage above which the charged sphere begins to be scattered. In positive-argon-ion implantation into three oxide powders at an average size of 5, 115 and 425 mu m, particle-scattering was observed above each ion-acceleration voltage (i.e., charging voltage) of 6.5, 1.0 and 2.7 kV, respectively. These voltages were in good agreement with the predicted threshold charging voltages. Conversely, in the negative-carbon-ion implantation, on the contrary, there was no scattering for all samples even at an ion acceleration voltage of 20 kV. The negative-ion implantation technique was found to be a non-scattering implantation method for powders.

リンク情報
DOI
https://doi.org/10.1016/0169-4332(96)00238-3
J-GLOBAL
https://jglobal.jst.go.jp/detail?JGLOBAL_ID=200902129764006245
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:A1996VD64000072&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/0169-4332(96)00238-3
  • ISSN : 0169-4332
  • J-Global ID : 200902129764006245
  • Web of Science ID : WOS:A1996VD64000072

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