松村信男 (Nobuo Matsumura) - マイポータル - researchmap

基本情報

所属: 旧所属京都工芸繊維大学大学院工芸科学研究科助手

学位: 工学修士(京都工芸繊維大学)

J-GLOBAL ID: 200901090001117340
researchmap会員ID: 1000029313

研究分野

2

経歴

2

1976年 - 2002年

京都工芸繊維大学助手
1976年 - 2002年

Research Associate, Kyoto Institute of Technology

学歴

4

MISC

39

Growth Conditions in Molecular Beam Epitaxy for controlling CdSeTe Epilayer Composition

Journal of Crystal Growth 251-602 2003年
Growth Conditions in Molecular Beam Epitaxy for controlling CdSeTe Epilayer Composition

Journal of Crystal Growth 251-602 2003年
Composition control of Case Te layers grown by molecular beam Epitaxy

Journal of Crystal Growth 237-239, 1550 2002年
Fabrication of ZnSe Piodes with CdSe Quantum-Dot Layers by Molecular Beam Epitaxy

Phys.stat.sol.(b) 229, 1039 2002年
Composition control of CdSeTe layers grown by molecular beam Epitaxy

Journal of Crystal Growth 237-239, 1550 2002年
Fabrication of ZnSe Diodes with CdSe Quantum-Dot Layers by Molecular Beam Epitaxy

Phys.stat.sol.(b) 229, 1039 2002年
Photoluminescence of self-assembled CdSe quantum dots by molecular beam epitaxy

Nobuo Matsumura, Takashi Saito, Junji Saraie

Journal of Crystal Growth 227-228 1121-1125 2001年7月
Molecular Beam Epitaxial Growth of Hexagonal CdSe and ZnCdSe on Cubic GaAs(111)B Substrates

Nobuo Matsumura, Jun Ueda, Junji Saraie

Japanese Journal Applied Physics 39(10B) L1026-L1028 2000年
Self-assembling CdTe quantum dots on ZnSe by alternate supplying and molecular beam epitayial method

Journal of Crystal Growth 214,215/694, 2000年
Self-Assembling CdSe, ZnCdSe and CdTe Quantum Dots on ZnSe(100) Epilayers

Nobuo Matsumura, Eiji Tai, Yoshihisa Kimura, Takashi Saito, Masao Ohira, Junji Saraie

Japanese Journal of Applied Physics 39(3A) 1104-1105 2000年
Self-Assembling Quantum Dots of CdSe and ZnCdSe on ZnSe/GaAs(100)

Ohmsha, Ltd. 1998年
Molecular beam epitaxy of ZnCdSe/ZnSe strained quantum-well structures on GaAs(111)A substrates and Piezoelectric properties

Journal of Crystal Growth 1998年
X-ray diffraction study of ZnSe(111) films grown on GaAs(111)A substrates by molecular beam epitaxy

N Matsumura, H Shimakawa, T Mori, K Maemura, J Saraie

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36(3A) 1256-1257 1997年3月
INTERNAL FIELD IN THE ZnCdSe/ZnSe STRAINED QUANTUM WELL STRUCTURES GROWN ON GaAs(111)A SUBSTRATES

Nonlinear Optics 18(2-4) 125 1997年
Molecular beam epitaxial growth of ZnSe(111) films on GaAs(111)B substrates and nitrogen doping

Journal of Crystal Growth 175,176/,608 1997年
Nitrogen-doped ZnSe(100) films grown by molecular beam epitaxy using a capacitively coupled plasma cell

J Saraie, K Yamawaki, N Matsumura, A Ikehara

JOURNAL OF CRYSTAL GROWTH 159(1-4) 334-337 1996年2月
Molecular beam epitaxial growth of ZnSe(111) films on misoriented GaAs(111)A substrates

N Matsumura, K Maemura, T Mori, J Saraie

JOURNAL OF CRYSTAL GROWTH 159(1-4) 85-88 1996年2月
OPTIMUM GROWTH-CONDITIONS OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE AT A LOW-TEMPERATURE

N MATSUMURA, K MAEMURA, N TAKANAKA, S ICHIKAWA, J SARAIE

JOURNAL OF CRYSTAL GROWTH 150(1-4) 755-759 1995年5月
Improvement in the Crystalline quality of ZnSe(111) films grown by molecular beam epitaxy using misoriented GaAS(111)A substrates

Japanese Journal of Applied Physics 34(9A) L1114-L1116 1995年
Li Planar doping fo ZnSe by molecular beam epitaxy

Nobuo Matsumura, Kenro Yamawaki, Susumu Ichikawa, Junji Saraie

Japanese Journal of Applied Physics 34(8A) 4118-4119 1995年

もっとみる

書籍等出版物

2

Nitrogen doping to ZnSe by molecular beam epitaxy with a capacitively-coupled plasma cell

Ohmsha, Proc. of International Symposium on Blue Laser and Light Emitting Diodes 1996年
New Functionality Materials (共著)

Elsevier 1993年

所属学協会

2

共同研究・競争的資金等の研究課題

2