2006年4月
Structure and formation mechanism of V defects in multiple InGaN/GaN quantum well layers
JOURNAL OF APPLIED PHYSICS
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- 巻
- 99
- 号
- 7
- 開始ページ
- 073505
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1063/1.2180532
- 出版者・発行元
- AMER INST PHYSICS
A variety of different transmission electron microscopy techniques, and particularly high-angle annular dark-field scanning transmission electron microscopy, has been used to reveal that V defects or inverted hexagonal pyramid defects in multiple InGaN/GaN quantum well (QW) layers nucleate on threading dislocations that cross the InGaN QW. The defects have thin walls lying parallel to {10 (1) over bar1} with the InGaN/GaN QW structure. A formation mechanism for the V defects is proposed taking into account the growth kinetics of GaN and the segregation of In atoms in the strain field around the cores of the threading dislocations.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2180532
- ISSN : 0021-8979
- eISSN : 1089-7550
- Web of Science ID : WOS:000236770900012