弓場愛彦 (Yoshihiko Yuba) - マイポータル - researchmap

基本情報

所属: 大阪大学大学院基礎工学研究科システム創成専攻電子光科学領域助教授

学位: 工学博士(大阪大学)

J-GLOBAL ID: 200901087858905644
researchmap会員ID: 1000030016

研究分野

4

経歴

4

1988年 - 1996年

大阪大学助手
1988年 - 1996年

Osaka University, Research Associate
1980年 - 1988年

大阪大学教務員
1980年 - 1988年

Osaka University, Research Assistant

学歴

4

MISC

32

Linear and nonlinear transports of coupled quantum dots

S Tsubaki, N Fujita, F Wakaya, Y Yuba, K Gamo

SUPERLATTICES AND MICROSTRUCTURES 27(5-6) 363-367 2000年5月
Transport of coupled double quantum dots in series

N Fujita, F Wakaya, Y Yuba, K Gamo

PHYSICA E 7(3-4) 420-424 2000年5月
Magnetization process and resistance jumps in a submicron-scale cross-shaped Co wire

J. Magn. Magn. Mat. 222(1/2) 79-85 2000年
Carrier profiles and electron traps at a growth-interrupted layer in GaAs fabricated by a focused ion beam and molecular beam epitaxy combined system

Appl. Surf. Sci. 159/160 277-281 2000年
Carrier distribution profiles in Si-doped layers in GaAs formed by focused ion implantation and succesive overlayer growth

J. Vac. Sci. Technol. B 18(6) 3158-3161 2000年
Exchange interaction from current and voltage probes in galvanomagnetic effect in polycrystal Co thin film

Jpn. J. Appl. Phys. 38(8) 4737-4740 1999年
Carrier profile of the Si-doped layer in GaAs fabricated by a low-energy focused ion beam/molecular beam epitaxy combined system

J. Vac. Sci. Technol. B 17(6) 3072-3074 1999年
Effects of growth interruption in ┣DBin situ(/)-┫DB process for buried quantum structures

Microelectronic Engineering 41(42/) 591 1998年
Interface states induced in GaAs by growth interruption during an ┣DBin situ(/)-┫DB process

J. Vac. Sci. Technol. B 16(4) 2313-2316 1998年
Fabrication of buried quantum structures using FIB-MBE total Vacuum System

Microelectronic Eng. 35 451 1997年
Fabrication of laterally selected Si doped layer in GaAs using a low-energy focused ion beam molecular beam epitaxy combined system

J Yanagisawa, H Nakayama, F Wakaya, Y Yuba, K Gamo

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 14(6) 3938-3941 1996年11月
Effects of growth interruption and FIB implantation in the UHV total vacuum process for the buried mesoscopic structures

F Wakaya, T Matsubara, H Nakayama, J Yanagisawa, Y Yuba, S Takaoka, K Murase, K Gamo

PHYSICA B 227(1-4) 268-270 1996年9月
集束イオンビーム加工と分子線結晶成長の複合プロセスを結合低次元電子系の作成

応用物理 65(2) 153 1996年
Maskless deposition of Au on GaAs by low-energy focused ion beam

Kuniyoshi Kito, Junichi Yanagisawa, Kentaro Monden, Hiromasa Nakayama, Yoshihiko Yuba, Kenji Gamo

Jpn. J. Appl. Phys. 34(12B) 6853-6856 1995年
Transport Properties and fabrication of cripled electron waveguide

Fujio Wakaya, Hisakazu Otoi, Junichi Yanagisawa, Yoshihiko Yuba, Sadao Takaoka, Kazuo Murase, Kenji Gamo, David G. Hasko, Geraint A. C. Jones, Haroon Ahmed

Jpn. J. Appl. Phys. 34(8B) 4446-4448 1995年
Investigation of in-situ Process for GaAs/AlGaAs Buried Quantum Wires

Fujio Wakaya, Kazuhiro Umeda, Junichi Yanagisawa, Yoshihiko Yuba, Sadao Takaoka, Kazuo Murase, Kenji Gamo

Japanese J. Appl. Phy. 33(12B) 7223-7227 1994年
LOW-ENERGY FOCUSED ION-BEAM AND BURIED ELECTRON WAVE-GUIDES FABRICATION

F WAKAYA, A NOZAWA, J YANAGISAWA, Y YUBA, S TAKAOKA, K MURASE, K GAMO

MICROELECTRONIC ENGINEERING 23(1-4) 123-126 1994年1月
(Transport Properties of Conpled Electron Waveguides Buried in Heterostructure)

(Japanese Journal Applied Physics) 32(12B) 6242 1993年
(Near-surface defects formed by MeV ion implantation into silicon)

(Nuclear Instrument and Methods) B80,587 1993年
DEEP LEVELS INDUCED BY HIGH-ENERGY BORON ION-IMPLANTATION INTO P-SILICON

H SAYAMA, M TAKAI, Y YUBA, S NAMBA, K TSUKAMOTO, Y AKASAKA

APPLIED PHYSICS LETTERS 61(14) 1682-1684 1992年10月

もっとみる

書籍等出版物

2

Characterization of laterally selected Si doped layer formed in Ga As using a low energy FIB-MBE combined system

Materials Res. Soc. Symp. 1997年
Investigation of Damage Induced by Low Energy Focused Ion Beam Irradiation in GaAs

Materials Res. Soc. Symp. 1994年

所属学協会

3

共同研究・競争的資金等の研究課題

6