1998年
EEM(Elastic Emission Machining)に関する研究-加工液中の溶在酸素がSiウエハ表面に与える影響-
精密工学会誌
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- 巻
- 64
- 号
- 6
- 開始ページ
- 907
- 終了ページ
- 912
- 記述言語
- 日本語
- 掲載種別
- DOI
- 10.2493/jjspe.64.907
- 出版者・発行元
- 公益社団法人精密工学会
Dissolved oxygen in the ultrapure water has been known to oxidize Si wafer. In EEM, ultrapure water is also employed as a carrier fluid of ultra-fine powders. Oxidization properties of Si(100) wafer surface under EEM setup were investigated in this work. An oxidization with the growth speed higher than several 10nm/h was observed. The distribution of the oxide film thickness seems to depend strongly on the flow pattern on the Si wafer surface. The high speed oxidization observed in this work was understood to concern both to the extent of shear flow rate on the Si wafer surface and to contents of not only dissolved oxygen but also OH^- ion in the ultrapure water.
- リンク情報
- ID情報
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- DOI : 10.2493/jjspe.64.907
- ISSN : 0912-0289
- ISSN : 1882-675X
- CiNii Articles ID : 110001367961
- CiNii Books ID : AN1003250X