2004年4月
Boron carbon nitride film with low dielectric constant as passivation film for high speed electronic devices
DIAMOND AND RELATED MATERIALS
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- ,
- ,
- 巻
- 13
- 号
- 4-8
- 開始ページ
- 1135
- 終了ページ
- 1138
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.dimaond.2003.12.013
- 出版者・発行元
- ELSEVIER SCIENCE SA
Hexagonal polycrystalline boron carbon nitride (BCN) films are synthesized by plasma-assisted chemical vapor deposition (PACVD). A dielectric constant as low as 1.9 has been achieved for the BCN film by annealing process at 400 degreesC for 15 min. Capacitance vs. voltage (C-V) characteristics are measured for the Ni/BCN/n-Si metal/insulator/semiconductor structure samples which are fabricated using BCN films with various C composition ratios. It is found that S-doping is effective in improving the C-V characteristics. The S-doped BCN film is deposited on n-GaAs substrate and the interface state density as low as 2.8 x 10(11) eV(-1)cm(-2) is achieved. (C) 2003 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.dimaond.2003.12.013
- ISSN : 0925-9635
- eISSN : 1879-0062
- Web of Science ID : WOS:000221691100115