高橋昌男 (Masao Takahashi) - マイポータル - researchmap

基本情報

所属: 大阪大学産業科学研究所

学位: 理学博士

J-GLOBAL ID: 200901090139612970
researchmap会員ID: 1000030933

研究キーワード

9

研究分野

4

経歴

2

2007年

- 大阪大学准教授
2007年

- Associate Professor, Osaka University

学歴

4

委員歴

1

1998年 - 2002年

DV-Xα研究協会, 常任幹事

MISC

202

Nitric acid oxidation of Si (NAOS) method at 120°C: HNO3 concentration dependence

J. Appl. Phys. 107(5) 2010年3月
Nitric acid oxidation of Si method at 120 degrees C: HNO3 concentration dependence

Kentaro Imamura, Masao Takahashi, Asuha, Yasuhiro Hirayama, Shigeki Imai, Hikaru Kobayashi

JOURNAL OF APPLIED PHYSICS 107(5) 2010年3月
Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

T. Matsumoto, Asuha, W. -B. Kim, M. Yamada, S. Imai, S. Terakawa, H. Kobayashi

MICROELECTRONIC ENGINEERING 86(7-9) 1939-1941 2009年7月
Acoustic spectroscopy and electrical characterization of SiO2/Si structures with ultrathin SiO2 layers formed by nitric acid oxidation

Peter Bury, Hikaru Kobayashi, Masao Takahashi, Kentaro Imamura, Peter Sidor, Frantisek Cernobila

CENTRAL EUROPEAN JOURNAL OF PHYSICS 7(2) 237-241 2009年6月
On the topographic and optical properties of SiC/SiO2 surfaces

Stanislav Jurecka, Maria Jureckova, Ferdinand Chovanec, Hikaru Kobayashi, Masao Takahashi, Milan Mikula, Emil Pincik

CENTRAL EUROPEAN JOURNAL OF PHYSICS 7(2) 321-326 2009年6月
Passivation of defect states in surface and edge regions on pn-junction Si solar cells by use of hydrogen cyanide solutions

Masao Takahashi, Takeru Shishido, Hitoo Iwasa, Hikaru Kobayashi

CENTRAL EUROPEAN JOURNAL OF PHYSICS 7(2) 227-231 2009年6月
Band alignment of SiO2/Si structure formed with nitric acid vapor below 500 degrees C

Kentarou Imamura, Masao Takahashi, Shigeki Imai, Hikaru Kobayashi

SURFACE SCIENCE 603(7) 968-972 2009年4月
Semiconductor surface cleaning by ppm order-defect passivation etchless solutions

2009年
Local structures around nickel contaminants on SiO2 surfaces and mechanism of nickel removal by dilute hydrocyanic acid aqueous solutions

2009年
Photoluminescence of passivated a-Si:H

Mater. Sci. Forum 609 281-285 2009年
On topographic properties of semiconductor surfaces and thin film systems

Mater. Sci. Forum 609 275-279 2009年
Nitric acid oxidation of Si (NAOS) method to form gate insulators in Si devices at 120°C

2009年
New semiconductor cleaning method by use of ppm order HCN solutions

2009年
Investigation of deep interface traps in very-thin oxide/Si structures prepared at low temperatures using chemical solutions

Mater. Sci. Forum 609 123-127 2009年
On similar electrical, optical and structural properties of MOS structures prepared on a-Si:H/c-Si, porous silicon/c-Si, and c-Si

Mater. Sci. Forum 609 11-25 2009年
Semiconductor surface cleaning by ppm order-defect passivation etchless solutions

2009年
Local structures around nickel contaminants on SiO2 surfaces and mechanism of nickel removal by dilute hydrocyanic acid aqueous solutions

2009年
Band alignment of SiO2/Si structure formed with nitric acid vapor below 500?C

Surf. Sci. 603 7 968-972 2009年
Photoluminescence of passivated a-Si:H

Mater. Sci. Forum 609 281-285 2009年
On topographic properties of semiconductor surfaces and thin film systems

Mater. Sci. Forum 609 275-279 2009年

もっとみる

書籍等出版物

5

Passivation of Defect States in Amorphous and Crystalline Si by use of Cyanide Treatment and Improvement of Solar Cell Characteristics

Mat. Res. Soc. Symp. Proc. 2002年
Formation of Layered Titanate K2Ti4O9 through Titanium Alkoxide Hydrolysis

Mater. Sci. 21st Century 2001年
Magnetic and interface characterization of rf-sputter deposited multilayered and granular Fe/AlN films (共著)

Ceramic Microstructure : Control at the Atomic Level, Plenum Press, New York 1998年
Bond Strength and Thermal Stability of Transition Metal Nitrides (共著)

Adv. Quantum Chem. , Academic Press, San Diego 1997年
"Transition metal-based double nitridos

"The chemistry of Transition Metal Carbides and Nitrides"Chapman&Hall 1996年

所属学協会

11

Works(作品等)

7

共同研究・競争的資金等の研究課題

6