NAKAYAMA Hiroshi

J-GLOBAL         Last updated: Apr 23, 2018 at 11:15
 
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Name
NAKAYAMA Hiroshi
Affiliation
Osaka City University
Section
Graduate School of Engineering, Physical Electronics and Informatics Course
Degree
Doctor of Engineering(Osaka University)

Research Areas

 
 

Academic & Professional Experience

 
1982
 - 
1983
IBM San Jose Research Lab.
 
1983
 - 
1990
 
1990
 - 
2000
 

Education

 
 
 - 
1981
Graduate School, Division of Engineering Science, Osaka University
 
 
 - 
1976
Faculty of Engineering Science, Osaka University
 

Misc

 
Appl. Phys. Lett.   66(14) 1794-1796   1995
J. Cryst. Growth   150(1/4 Pt 1) 671-676   1995
Field evolution of electronic states in a finite-period InGaAs/GaAs Strained layer superlattice
Mem. Grad. School Sci. and Technol. , Kobe Univ.   12-A 1-9   1994
Multiple Shallow Acceptor Levels of Rare-Earth Impurities in Silicon
Solid State Commum.      1994

Books etc

 
Atomic Ordering in Epitaxial Alloy Semiconductors: from the Discoveries to the Physical Understanding
Advances in the Understanding of Crystal Growth Mechanism, Elsevier Science   1997   

Research Grants & Projects

 
Molecular Beam Epitaxy of GaN for Spin-Photonics Application
Transition-Metal and Rare-Earth Impurities in Silicon
UHV-CVD of Silicon and diamond-related thin films.