MISC

2003年12月

Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

PHYSICA B-CONDENSED MATTER
  • T Ishiyama
  • ,
  • M Yoshida
  • ,
  • Y Yamashita
  • ,
  • Y Kamiura
  • ,
  • T Date
  • ,
  • T Hasegawa
  • ,
  • K Inoue
  • ,
  • K Okuno

340
開始ページ
818
終了ページ
822
記述言語
英語
掲載種別
DOI
10.1016/j.physb.2003.09.225
出版者・発行元
ELSEVIER SCIENCE BV

We studied on the effect of the strain on photoluminescence (PL) properties of Er-doped Si on a SiGe layer (Si:Er:O/SiGe) and Er-doped SiGe on a Si layer (SiGe:Er:O/Si) grown by molecular beam epitaxy. Er-related luminescence was observed around 1.54 mum in all the samples. The PL spectra of the Si:Er:O/SiGe samples are much broader and stronger than those of the Si:Er:O/Si samples prepared as reference. Moreover, the intensive luminescence was observed in the Si:Er:O/SiGe sample that had much lower Er concentration of about 2.5 x 10(16) cm(-3). On the other hand, the significant differences in the PL spectra between the SiGe:Er:O/Si and Si:Er:O/Si samples were not observed. These indicate that the tensile strained Si enhances the optical activation of Er. (C) 2003 Elsevier B.V. All rights reserved.

Web of Science ® 被引用回数 : 3

リンク情報
DOI
https://doi.org/10.1016/j.physb.2003.09.225
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000188300200171&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.physb.2003.09.225
  • ISSN : 0921-4526
  • Web of Science ID : WOS:000188300200171

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