Apr, 2008
Transport properties in C(60) field-effect transistor with a single Schottky barrier
APPLIED PHYSICS LETTERS
- ,
- ,
- Volume
- 92
- Number
- 17
- First page
- 173306
- Last page
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1063/1.2919799
- Publisher
- AMER INST PHYSICS
C(60) field-effect transistor (FET) has been fabricated with a single Schottky barrier formed by an insertion of 1-dodecanethiol at the interface between the active layer and the gate dielectric. The suppression of drain current is observed at low drain-source voltage, showing a formation of the carrier injection barrier. Furthermore, a clear difference between forward and reverse drain currents is observed in the FET in a high temperature region, showing that this FET device is close to an ideal single Schottky diode. The quantitative analysis for carrier injection barrier has been achieved with thermionic emission model for a single Schottky barrier. (c) 2008 American Institue of Physics.
- Link information
- ID information
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- DOI : 10.1063/1.2919799
- ISSN : 0003-6951
- Web of Science ID : WOS:000255524000082