論文

査読有り
2007年11月

Transport properties of field-effect transistors with thin films Of C-76 and its electronic structure

CHEMICAL PHYSICS LETTERS
  • Hiroyuki Suglyama
  • ,
  • Takarki Nagano
  • ,
  • Ryo Nouchi
  • ,
  • Naoko Kawasaki
  • ,
  • Yohei Ohta
  • ,
  • Kumiko Imai
  • ,
  • Michiko Tsutsui
  • ,
  • Yoshihiro Kubozono
  • ,
  • Akihiko Fujiwara

449
1-3
開始ページ
160
終了ページ
164
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.cplett.2007.10.012
出版者・発行元
ELSEVIER SCIENCE BV

The C-76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, P., of 3.9 x 10(-4) CM2 V-1 s(-1), and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C-76 FET followed a thermally-activated hopping transport model. The normally-off like properties Of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.cplett.2007.10.012
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000251575300031&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.cplett.2007.10.012
  • ISSN : 0009-2614
  • Web of Science ID : WOS:000251575300031

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