2007年11月
Transport properties of field-effect transistors with thin films Of C-76 and its electronic structure
CHEMICAL PHYSICS LETTERS
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- 巻
- 449
- 号
- 1-3
- 開始ページ
- 160
- 終了ページ
- 164
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.cplett.2007.10.012
- 出版者・発行元
- ELSEVIER SCIENCE BV
The C-76 field-effect transistor (FET) showed n-channel normally-off like behavior with n-channel field-effect mobility, P., of 3.9 x 10(-4) CM2 V-1 s(-1), and the highest on-off ratio, 125, among higher fullerenes FETs. The carrier transport in the C-76 FET followed a thermally-activated hopping transport model. The normally-off like properties Of C76 FET could be reasonably explained in terms of the electronic structure of thin films determined by photoemission spectroscopy. (c) 2007 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.cplett.2007.10.012
- ISSN : 0009-2614
- Web of Science ID : WOS:000251575300031