Nov, 2006
Fabrication of field-effect transistor devices with fullerene related materials
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
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- Volume
- 243
- Number
- 13
- First page
- 3021
- Last page
- 3024
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1002/pssb.200669178
- Publisher
- WILEY-V C H VERLAG GMBH
Field-effect transistor (FET) devices have been fabricated with thin films of fullerodendrons (I), (II) and (III) by using solution process. The n-channel normally-off FET properties have been observed in the fullerodendron (I) and (II) FET devices with SiO2/Si substrate. The values of field-effect mobility, mu, of the fullerodendron (I) and (II) FETs were determined to be 4.5 x 10(-4) and 1.4 x 10(-3) cm(2) V-1 s(-1), respectively, at 300 K. On the other hand, the n-channel normally-on FET properties have been observed in the fullerodendron (II) FET devices with three types of polymer gate insulators on poly(ehylene terephthalate) substrates.
- Link information
- ID information
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- DOI : 10.1002/pssb.200669178
- ISSN : 0370-1972
- Web of Science ID : WOS:000242187000012