Papers

Peer-reviewed
Jul, 2006

Variation of output properties of perylene field-effect transistors by work function of source/drain electrodes

APPLIED PHYSICS LETTERS
  • Toshio Ohta
    • ,
  • Takayuki Nagano
    • ,
  • Kenji Ochi
    • ,
  • Yoshihiro Kubozono
    • ,
  • Eiji Shikoh
    • ,
  • Akihiko Fujiwara
Volume
89
Number
5
First page
053508
Last page
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1063/1.2266596
Publisher
AMER INST PHYSICS
Field-effect transistor (FET) devices with thin films of perylene have been fabricated with various metal electrodes exhibiting work function phi from 2.5 to 5.1 eV. All perylene FET devices show p-channel FET properties. The p-channel field-effect mobility mu(p) and the on-off ratio in the perylene FET increase with an increase in phi of the metal electrodes. The n-channel conduction is also observed for the FET devices with Eu and Sr electrodes exhibiting small phi. These results can be reasonably explained on the basis of energy barrier for hole or electron. (c) 2006 American Institute of Physics.
Link information
DOI
https://doi.org/10.1063/1.2266596
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000239520200107&DestApp=WOS_CPL
ID information
  • DOI : 10.1063/1.2266596
  • ISSN : 0003-6951
  • Web of Science ID : WOS:000239520200107
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