2006年4月
Fabrication of field-effect transistor devices with fullerodendron by solution process
APPLIED PHYSICS LETTERS
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- 巻
- 88
- 号
- 17
- 開始ページ
- 173509
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文（学術雑誌）
- DOI
- 10.1063/1.2198098
- 出版者・発行元
- AMER INST PHYSICS
n-channel field-effect transistor (FET) devices have been fabricated with thin films of fullerodendron on SiO2/Si, polyimide/Au/poly(ethylene terephthalate), and polyvinyl alcohol/Au/poly(ethylene terephthalate) substrates by using solution processes. The value of field-effect mobility mu of the fullerodendron FET reaches 1.7 x 10(-3) cm(2) V-1 s(-1) at 300 K. The mobility gap and optical gap have been estimated to be 0.15 and 1.4 eV, respectively. The channel conduction in the FET device follows thermally activated hopping-transport mechanism below 300 K. (c) 2006 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.2198098
- ISSN : 0003-6951
- Web of Science ID : WOS:000237136600091