論文

査読有り
2005年5月

Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification

JOURNAL OF APPLIED PHYSICS
  • T Nishikawa
  • ,
  • S Kobayashi
  • ,
  • T Nakanowatari
  • ,
  • T Mitani
  • ,
  • T Shimoda
  • ,
  • Y Kubozono
  • ,
  • G Yamamoto
  • ,
  • H Ishii
  • ,
  • M Niwano
  • ,
  • Y Iwasa

97
10
開始ページ
104509
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.1903109
出版者・発行元
AMER INST PHYSICS

We report an ambipolar operation in field-effect transistors of C-60 and metallofullerene Dy @ C-82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves. (c) 2005 American Institute of Physics.

リンク情報
DOI
https://doi.org/10.1063/1.1903109
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000230168100155&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.1903109
  • ISSN : 0021-8979
  • Web of Science ID : WOS:000230168100155

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