2005年5月
Ambipolar operation of fullerene field-effect transistors by semiconductor/metal interface modification
JOURNAL OF APPLIED PHYSICS
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- 巻
- 97
- 号
- 10
- 開始ページ
- 104509
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1903109
- 出版者・発行元
- AMER INST PHYSICS
We report an ambipolar operation in field-effect transistors of C-60 and metallofullerene Dy @ C-82 by modification of semiconductor/metal electrode interface with perfluoroalkylsilane (FAS) molecules. Kelvin probe experiments revealed that the work function of the gold surface modified with FAS molecules increased by 0.55 eV as compared to the untreated gold. Hole injection into fullerenes is qualitatively understood in terms of this work-function change induced by the FAS molecules. The present results indicate that the charge injection from electrodes to organic semiconductors can be controlled simply by modification of semiconductor/metal interface without changing materials themselves. (c) 2005 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1903109
- ISSN : 0021-8979
- Web of Science ID : WOS:000230168100155