2004年4月
Fabrication and characteristics of C-84 fullerene field-effect transistors
APPLIED PHYSICS LETTERS
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- 巻
- 84
- 号
- 14
- 開始ページ
- 2572
- 終了ページ
- 2574
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.1695193
- 出版者・発行元
- AMER INST PHYSICS
Fullerene field-effect transistors (FETs) were fabricated with thin films of C-84, which showed n-channel normally-on depletion-type FET characteristics. The C-84 FET device exhibited the highest mobility, mu, of 2.1x10(-3) cm(2) V-1 s(-1) among normally-on fullerene FETs. The carrier transport of this FET device can be interpreted as thermally activated hopping transport. Carrier type (n-channel) and transport mechanism (hopping) reflect the electronic properties of the C-84 molecule. (C) 2004 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.1695193
- ISSN : 0003-6951
- Web of Science ID : WOS:000220586800034