2003年12月
Structural changes at a T-d impurity induced by intra-photoexcitation and carrier capture
PHYSICA B-CONDENSED MATTER
- ,
- 巻
- 340
- 号
- 開始ページ
- 349
- 終了ページ
- 352
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.physb.2003.09.092
- 出版者・発行元
- ELSEVIER SCIENCE BV
We study theoretically how the stable structure of Td impurities in covalent semiconductors is changed by two types of electronic excitation: intra-photoexcitation and carrier capture. The Td T-U-S model is used, which is tetrahedrally constructed from four sites representing four antibonding (or bonding) orbitals for a substitutional donor (acceptor) impurity in the diamond and zincblende structures. It is shown that the character of the stable structure is either T-d, C-3v, Q(2v), C-s or C depending on the ratio of parameters (T, U, S), the electron occupation number n (hence on the charge state), the total spin and the total electronic state. Structural changes and the relaxation dynamics of DX-center in AlxGa1-xAs and EL2-center in GaAs are discussed with the obtained adiabatic potential surfaces and the phase diagrams. (C) 2003 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.physb.2003.09.092
- ISSN : 0921-4526
- Web of Science ID : WOS:000188300200067