前濵 剛廣

Preparation of Amor-phous Hydrogenated Carbon Films by RF Sputtering at a Low-Hydrogen-Flow-Rate Region for Hydrogen-Reactive Substrates 

Japanese Journal of Applied Physics Vol.43 No.5A pp.2640-2644 2004年  

Preparation of Amor-phous Hydrogenated Carbon Films by RF Sputtering at a Low-Hydrogen-Flow-Rate Region for Hydrogen-Reactive Substrates 

Japanese Journal of Applied Physics Vol.43 No.5A pp.2640-2644 2004年  

Infrared Reflection Spectroscopic Investigation Adsorption of SiH_x(CH₃)_4-x on Si Surface 

Electronics and Communications in Japan Part 2, 85(5), 59-65 2002年  

誘導結合型酸素プラズマ処理によるCdTe表面酸化層の形成と表面リーク電流低減効果 

電子情報通信学会論文集 J85-C(4), 285-292 2002年  

Formation of Surface Oxide Layer on CdTe and Reduction of Surface Leakage Current by Inductively Coupled O₂ Plasma Treatment 

The Transactions of the Institute of Electronics, Information and Communication Engineers C J85-C(4), 285-292 2002年  

Ferroelectric Thin Films Prepared by Backside Pulsed Ion-Beam Evaporation 

Japanese Journal of Applied Physics 40(2B) 1049-1051 2001年  

背面堆積パルスイオンビーム蒸着法で作製された強誘電体材料薄膜の組成分析 

電気学会論文誌 120-A(4) 427-432 2000年  

Composition of Ferroelectric Thin Films Mepared by Backside Pulsed Ion-Beam Evaporation 

The Transactions of The Institute of Electrical Engineers of Japan 120-A(4) 427-432 2000年  

Measurement of Porosity of Porous Silicon Using X-Ray Refraction Effect 

Japanese Journal of Applied Physics 39(6A) 3649-3656 2000年  

SiH_x(CH₃)_4-x分子のSi表面吸着過程の赤外反射分光解析 

電子情報通信学会論文誌 J82-C(]G0002[)(10) 557-562 1999年  

Infrared Reflection Spectroscopy Investigation of Adsorption of SiH_x(CH₃)_4-x on Si Surfaces 

The Transactions of The Institute of Electronics, Information and Communication Engineers J82-C(]G0002[)(10) 557-562 1999年  

Structural Analysis of Porous Silicon Multilayer using X-Ray Diffraction 

Japanese Journal of Applied Physics 37(3A) 998-1005 1998年  

Measurements of the Off-Angle of Crystal Surface and the Refractive Index of Crystal for X-rays by the X-ray Two-Incidence Surface Method 

Japanese Journal of Applied Physics 35(8) 4567-4572 1996年  

Homoepitaxial Diamond Synthesis by DC Arc Jet Chemical Vapor Deposition 

Japanese Journal of Applied Physics 35(5A) L577-L580 1996年  

X線二結晶法によるストライプ状SiO₂/GaAs基板の格子歪分布の測定 

琉球大学工学部紀要 (48) 147 1994年  

X線二結晶法によるストライプSiO₂/GaAs基板の格子歪の測定 

琉球大学工学部紀要 47,77 1994年  

Measurement of Lattice Strain Distribution of Striped SiO₂/GaAs Substrate by X-ray Double Crystal Method 

Bulletin of the Faculty of Engineering University of the Ryukyus (48) 147 1994年  

Measurement of Lattice Strain of Striped SiO₂/GaAs Substrate by X-ray Double Crystal Method 

Bulletin of the Faculty of Enginerring University of the Ryukyus 47,77 1994年