2015年2月
Dynamic probe of ZnTe(110) surface by scanning tunneling microscopy
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
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- 巻
- 16
- 号
- 1
- 開始ページ
- 015002
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1088/1468-6996/16/1/015002
- 出版者・発行元
- IOP PUBLISHING LTD
The reconstructed surface structure of the II-VI semiconductor ZnTe (110), which is a promising material in the research field of semiconductor spintronics, was studied by scanning tunneling microscopy/spectroscopy (STM/STS). First, the surface states formed by reconstruction by the charge transfer of dangling bond electrons from cationic Zn to anionic Te atoms, which are similar to those of IV and III-V semiconductors, were confirmed in real space. Secondly, oscillation in tunneling current between binary states, which is considered to reflect a conformational change in the topmost Zn-Te structure between the reconstructed and bulk-like ideal structures, was directly observed by STM. Third, using the technique of charge injection, a surface atomic structure was successfully fabricated, suggesting the possibility of atomic-scale manipulation of this widely applicable surface of ZnTe.
- リンク情報
- ID情報
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- DOI : 10.1088/1468-6996/16/1/015002
- ISSN : 1468-6996
- eISSN : 1878-5514
- Web of Science ID : WOS:000350567500018