論文

2014年2月

Light-induced hydrogen evolution from hydrogenated amorphous silicon: Hydrogen diffusion by formation of bond centered hydrogen

JOURNAL OF APPLIED PHYSICS
  • H. Tanimoto
  • ,
  • H. Arai
  • ,
  • H. Mizubayashi
  • ,
  • M. Yamanaka
  • ,
  • I. Sakata

115
7
開始ページ
073503
終了ページ
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/1.4865166
出版者・発行元
AMER INST PHYSICS

The light-induced hydrogen evolution (LIHE) from amorphous (a-) Si:H by the order of at. % is observed during white light soaking (WLS) of 100-400 mW/cm(2) at 350-500K or ultra violet light soaking (UVLS) of 30-120 mW/cm(2) at 305-320K in a vacuum. The thermal desorption spectroscopy indicates that LIHE originated from bonded hydrogen takes place through the diffusion of light-induced mobile hydrogen (LIMH) with the activation energy of 0.5 eV. LIMH is assigned to bond centered hydrogen and the hydrogen diffusion process becomes prominent when LIMH can leave from a-Si:H such under light soaking in a vacuum above room temperature. For H-2 in microvoids, the hydrogen evolution rate is governed by the surface barrier and its activation energy of 1.0 eV in dark decreases to 0.4 eV under WLS or UVLS. (C) 2014 AIP Publishing LLC.

リンク情報
DOI
https://doi.org/10.1063/1.4865166
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000332042000006&DestApp=WOS_CPL
ID情報
  • DOI : 10.1063/1.4865166
  • ISSN : 0021-8979
  • eISSN : 1089-7550
  • Web of Science ID : WOS:000332042000006

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