2008年11月
Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 266
- 号
- 21
- 開始ページ
- 4762
- 終了ページ
- 4765
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.nimb.2008.07.027
- 出版者・発行元
- ELSEVIER SCIENCE BV
Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss. (C) 2008 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nimb.2008.07.027
- ISSN : 0168-583X
- CiNii Articles ID : 80019925115
- Web of Science ID : WOS:000261263700007