MISC

2008年11月

Reduction in polarization dependent loss of a planar lightwave circuit by ion-implantation-induced birefringence

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
  • Seung-Jun Yu
  • ,
  • Yoshimichi Ohki
  • ,
  • Makoto Fujimaki
  • ,
  • Koichi Awazu
  • ,
  • Junji Tominaga
  • ,
  • Kimikazu Sasa
  • ,
  • Tetsuro Komatsubara

266
21
開始ページ
4762
終了ページ
4765
記述言語
英語
掲載種別
DOI
10.1016/j.nimb.2008.07.027
出版者・発行元
ELSEVIER SCIENCE BV

Reduction in polarization dependent loss of a planar lightwave circuit was achieved by asymmetric birefringence formed by ion implantation, in which oxygen ions were implanted along a diagonal of a cross-section of the planar lightwave circuit. The induced birefringence has a slow axis along the line perpendicular to the diagonal. In the present research, a decrease in polarization dependent loss of up to 3.7 dB was obtained, indicating that the method is effective for reducing polarization dependent loss. (C) 2008 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.nimb.2008.07.027
CiNii Articles
http://ci.nii.ac.jp/naid/80019925115
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000261263700007&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nimb.2008.07.027
  • ISSN : 0168-583X
  • CiNii Articles ID : 80019925115
  • Web of Science ID : WOS:000261263700007

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