We report the electrical properties of 2SrTiO(3)-SiO2, glass in the frequency range 100 <= f <= 10(7) Hz from 30 degrees C to near 600 degrees C. We have found that the anomalous dielectric constant decreases with the increase of annealing cycle and the heat-treated sample under oxygen atmosphere. The non-Debye behavior in the complex permittivity Cole-Cole formula has been used to interpret the relaxation mechanism of a dielectric anomaly. The activation energy for the relaxation process related to oxygen vacancies is in the range of 0.5-0.6 eV. The values of ce are 0.76-0.84 for the sample of the various heat-treatment conditions. We have explained that the dielectric relaxation originates from the hopping of ions and local arrangement in this system. (c) 2006 Elsevier B.V. All rights reserved.