2005年3月
Resonant coherent excitation of C5+ in Si observed with backward electron spectroscopy
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
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- 巻
- 229
- 号
- 2
- 開始ページ
- 227
- 終了ページ
- 231
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1016/j.nimb.2004.11.018
- 出版者・発行元
- ELSEVIER SCIENCE BV
Resonant coherent excitation (RCE) of C5+ has been observed with the loss electron yield produced by ionization of the projectiles, measured in the backward direction from a bulk Si crystal. At a resonance energy of 3.01 MeV/u for Si(100), the loss electron yield obtained from the difference between the electron yield for the C5+ and C6+ beams has been increased by a factor of 1.2-1.3 due to RCE from the ground state to the first excited state (n = 1 to 2) of C5+. The backward spectroscopy of loss electrons allows observations of RCE that is restricted within an extremely thin surface layer of the bulk crystals. In addition, the RCE-assisted electron loss process is of vital importance for precise understanding of the loss electron spectra from single crystal targets. (c) 2004 Elsevier B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/j.nimb.2004.11.018
- ISSN : 0168-583X
- CiNii Articles ID : 120001870266
- Web of Science ID : WOS:000227669600005