2005年9月
New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistors
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
- ,
- ,
- 巻
- 44
- 号
- 9A
- 開始ページ
- 6463
- 終了ページ
- 6470
- 記述言語
- 英語
- 掲載種別
- DOI
- 10.1143/JJAP.44.6463
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
A new Monte Carlo simulation technique considering the uncertainty relation and the Pauli principle is proposed for analyzing a quasi-ballistic metal oxide semiconductor field-effect transistor (MOSFET). Instead of the conventional phase space that consists of continuous position and momentum, a discrete phase space represented by a complete basis set of the state vector is employed. The carrier dynamics in the device are analyzed using the Monte Carlo simulation framework, in which a possible transition among numerous probabilistic transitions between these discrete states is selected using random numbers. The technique is applied to a 90nm MOSFET. Analysis shows how the phonon scattering disturbs the ballistic transport, and yields a result that the backscattered flux due to phonon scattering amounts to 27% of the original carrier flux injected from the source for the device.
- リンク情報
- ID情報
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- DOI : 10.1143/JJAP.44.6463
- ISSN : 0021-4922
- Web of Science ID : WOS:000232260700019