2018年2月1日
Experimental analysis of dark frame growth mechanism in organic light-emitting diodes
Japanese Journal of Applied Physics
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- 巻
- 57
- 号
- 2
- 開始ページ
- 02CA10
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.7567/JJAP.57.02CA10
- 出版者・発行元
- Japan Society of Applied Physics
Organic light-emitting diodes (OLEDs) were fabricated with heterojunction interfaces and layers that were prepared by cold isostatic pressing (CIP), and the growth characteristics of their non-emission areas, or dark frames (D/Fs), were investigated during storage. We fabricated an OLED with an indium-tin-oxide (ITO)/N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (α-NPD)/tris(8-hydroxylquinoline)aluminum (Alq3)/LiF/Al structure without CIP treatment (Device I), as well as OLEDs that were pressed after the deposition of α-NPD (Device II), Alq3 (Device III), and LiF/Al (Device IV) layers. Although Devices I, II, and III showed typical D/F growth characteristics, the D/F growth rate in Device IV was markedly mitigated, indicating that the Alq3/LiF/Al interfaces dominated the D/F growth. Moreover, we found that the electron injection characteristic was poorer in the electron-only device stored after the LiF layer deposition than in that stored before the LiF deposition. Therefore, the decreased electron injection due to storage at the interfaces was attributed to the D/F growth.
- ID情報
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- DOI : 10.7567/JJAP.57.02CA10
- ISSN : 1347-4065
- ISSN : 0021-4922
- SCOPUS ID : 85040951552