HAYAMA Kiyoteru

J-GLOBAL         Last updated: Sep 24, 2018 at 15:24
 
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Name
HAYAMA Kiyoteru
Affiliation
Kumamoto National College of Technology
Section
Department of Information, Communication and Electronic Engineering, Department of Information and Communication Engineering
Job title
Associate Professor
Degree
Master of Engineering(Toyohashi University of Technology), Doctor of Engineering(Toyohashi University of Technology)

Research Areas

 

Education

 
 
 - 
1991
Graduate School, Division of Engineering, Toyohashi University of Technology
 
 
 - 
1989
Faculty of Engineering, Toyohashi University of Technology
 

Misc

 
A study on electron beam irradiation damage in operational amplifiers
18    1991
Kiyoteru Hayama, Makoto Ishida, Tetsuro Nakamura
Jpn. J, Appl. Phys,   33(1B) 496-499   1994
OHYAMA H, VANHELLEMONT J, TAKAMI Y, HAYAMA K, SUNAGA H, POORTMANS J, CAYMAX M, CLAUWS P
IEEE Trans. on Nucl. Sci.   41(6 Pt 1) 2437-2442   1994
OHYAMA H, HAYAMA K, TOKUYAMA J
Physica status solidi (a)   143(1) 57-59   1994
ISHIDA M, YOSHIZU T, HAYAMA K, NAKAMURA T
Applied surface Science   79/80 356-360   1994

Books etc

 
Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs with back accumulation mode operation
CD Proc. of International Conference on Electrical Engineering 2005 (ICEE2005), July 10-14, 2005, Kunming, China   2005   
Degradation of the Electrical Performance and Floating Body Effects in Thin Gate Oxide PD-SOI MOSFETs by 2-MeV Electron Irradiation
Extended abstracts of the 24rd electronic materials symposium   2005   
Radiation tolerance in HfSiON gate MOSFETs by high-energy particles irradiation
Extended abstracts of the 24rd electronic materials symposium   2005   
Degradation of the Electrical Performance and Floating Body Effects in Ultra Thin Gate Oxide FD-SOI n-MOSFETs by 2-MeV Electron Irradiation
Proc. of Radiation Effects on Components and Systems, RADECS 2004 workshop, September 22-24, Madrid, Spain   2004   
Degradation of Electrical Performance in FD-SOI n-MOSFETs by 7.5-MeV Protons and 2-MeV Electrons
Proceeding of 2004 Japan-Korea Joint Workshop on Advanced Semiconductor Processes and Equipments, Nov. 18-20, Unzen, Japan   2004   

Research Grants & Projects

 
fabrication of SOI structure
The Other Research Programs
Radiation hardening of semiconductor devices
The Other Research Programs

Career

 
1991-1992 Kumamoto National College of Technology, Department of Information and Communication Engineering, Research Assistant1992-1993 Toyohashi University of Technology, tecnology development center, Research Assistant1993-1997 Kumamoto National College of Technology, Department of Information and Communication Engineering, Research Assistant1998 Kumamoto National College of Technology, Department of Information and Communication Engineering, Lecturer1998-2000 Kumamoto National College of Technology, Department of Electronic Engineering, Lecturer2000-2002 Kumamoto National College of Technology, Department of Electronic Engineering, Associate Professor2003 IMEC (Interuniversity MicroElectronics Center), Visiting Researcher.2004-2005 Kumamoto National College of Technology, Department of Electronic Engineering, Associate Professor