青笹 正夫

Materials and Fabrication of Organic Bilayer EL Device Preparation of Aromatic Tertiary Amines as Hole Transporting Agent and Their Current-Voltage Characteristics 

Journal of the Chemical Society of Japan, Chemistry and Industrial Chemistry (2) 134-138 1997年  

Surface Potential of Substrate during Preparation of Amorphous Silicon in a Triode Glow Discharge 

The 3rd Asia-Pacific Conference on Plasma Science & Technology 1-23 1996年  

Partial Discharge Characteristics of Polymer Films Coated with Plasma-Polymerized Films 

The 3rd Asia-Pacific Conference on Plasma Science & Technology 1-5 1996年  

Correlation between Adhesion Strength of Plasma-Polymerized Hexamethyldisiloxane Films to Polytetrafluoroethylene and Partial Discharge Resistance 

Japanese Journal of Applied Physics 34(9A) 4924-4928 1995年  

Optical emission spectroscopy of rf-magnetron sputtering plasma for fabrication of ZnS:Mn active layer in thin-film EL devices 

Memoirs of the Faculty of Eng,Osaka City Univ. 36 13 1995年  

Effects of Substituents in Molecules Used as Luminescent Layer on EL Spectrum 

3 1994年  

SiC Hard Coatings on Stainless Steel By Biased Plasma CVD 

The 9th Meeting of Euro CVD 1993年  

Characterization of Zinc Sulfide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition 

Mem. Fac. Eng. , Osaka City Univ. 34,25 1993年  

Luminescent Properties of Organic Thin Film EL Devices 

Mem. Fac. Eng. , Osaka City Univ. 34,17 1993年  

Dielectric Breakdown of SiAlON Insulating Thin Films Prepared by RF Magnetron Sputtering 

IUMRS Int. Conf. Adv. Mat. 1993年  

ZnS : Eu Thin Film Electroluminescent Devices Prepared by Rf-Magnetron Sputtering 

Thin Solid Films 199 1991年  

A SYNTHESIS OF THE DIAMINE 

Chemistry Express 6(7) 1991年  

CaS : Eu, F Thin Film Electroluminescent Devices Prepared by Rf-Sputtering with Hydrogen-Argon Mixture Gas 

Japan. J. Appl. Phys. 29(10) 1990年  

An XPS Study of Multilayer Electroluminescent Devices 

International Meeting on Advanced Materials K2 1988年  

Electrical Breakdown Strength of Al₂O₃, Si₃N₄ and SiAlON Insulating Films Prepared by rf-magnetron Sputtering 

Memoirs of the Faculty of Eng, Osaka City Univ. 28 1987年