INOUE Tomoyasu

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Name
INOUE Tomoyasu
Affiliation
Iwaki Meisei University
Section
College of Science and Engineering Department of Science and Engineering
Job title
Professor
Degree
PhD(Waseda University)

Research Interests

 
 

Research Areas

 
 

Education

 
 
 - 
1971
Graduate School, Division of Science and Engineering, Waseda University
 
 
 - 
1969
Faculty of Science and Engineering, Waseda University
 

Published Papers

 
Developments in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth
INOUE Tomoyasu
28 9-17   Mar 2015
Hybrid Orientation Selective Epitaxial Growth of CeO2(100) and (110) regions on Si(100) Substrates
T. Inoue and S. Shida
Proc. 12th Int. Symp. Sputtering & Plasma Processes   87-90   2013   [Refereed]
Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientaion Selective Epitaxial Growth of CeO2(100) and (110) areas on Si(100) Substrates
T. Inoue and S. Shida
Electrochem. Soc. Trans.   45 443-451   2012   [Refereed]
Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO2 Layers on Si(100) Substrates using Absorbed Electron Imaging System
INOUE Tomoyasu
24 1-8   Mar 2011
Hybrid Orientation Substrate Fabrication using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates by Reactive Magnetron Sputtering
T. Inoue and S. Shida
Proc. 4th Int. Conf. Advanced Plasma Technol.   168-170   2011   [Refereed]
T. Inoue, N. Igarashi, Y. Kanno and S. Shida
Thin Solid Films   519 5775-5779   2011   [Refereed]
Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100)/Si(100) Structures using Absorption Electron Imaging System
T. Inoue and S. Shida
Electrochem. Soc. Trans.   25 187-197   2009   [Refereed]
Optimization of Growth Parameters in Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100)/Si(100) Structures
T. Inoue, H. Ohtake, J. Otani and S. Shida
Electrochem. Soc. Trans.   13 341-351   2008   [Refereed]
Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100) Layers on Si(100) Substrates by Reactive Magnetron Sputtering
T. Inoue, Y. Nakata and S. Shida
J. Phys. Conf. Ser.   100 082014   2008   [Refereed]
Orientaion Selective Epitaxial Growth of CeO2 Layers on Si(100) Substrates by Reactive Magnetron Sputtering
INOUE Tomoyasu
20 1-13   Mar 2007   [Refereed]
T. Inoue, Y. Nakata, S. Shida and K. Kato
J. Vac. Sci. Technol. A   25 1128-1132   2007   [Refereed]
T. Inoue, T. Saito and S. Shida
J. Cryst. Growth   304 1-3   2007   [Refereed]
T. Inoue, N. Sakamoto, M. Ohashi and A. Horikawa
J. Vac. Sci. Technol. A   22 46-48   2004   [Refereed]
Orientation Selective Epitaxial Growth of CeO2(100) and CeO2(110) Layers on Si(100) Substrates
T. Inoue, N. Sakamoto, M. Ohashi and A. Horikawa
J. Cryst. Growth   253 366-373   2004   [Refereed]
T. Inoue, S. Shida, N. Sakamoto, A. Horikawa and M. Ohashi
J. Cryst. Growth   253 366-373   2003   [Refereed]
T. Inoue, S. Shida, N. Sakamoto, A. Horikawa, H. Takakura, K. Takahashi and M. Ohashi
J. Vac. Sci. Technol. A   21 1371-1375   2003   [Refereed]
Naomichi Sakamoto, Tomoyasu Inoue and Kazuhiro Kato
Cryst. Growth & Design   3(2) 115-116   2003   [Refereed]
T. Inoue, Y. Yamamoto and M. Satoh
J. Vac. Sci. Technol. A   19 275-279   2001   [Refereed]
T. Inoue, T. Nakamura, S. Nihei, S. Kamata, N. Sakamoto and Y. Yamamoto
J. Vac. Sci. Techonol. A   18 1613-1618   2000   [Refereed]
Y. Yamamoto, K. Yamaguchi, M. Taya, M. Muraoka, M. Satoh and T. Inoue
Nucl. Instrum. & Method   B148 798-802   1999   [Refereed]
Low Temperature Epitaxial Growth of CeO2(110)/Si(100) Structure by Electron Beam Assisted Evaporation
T. Inoue, Y. Yamamoto and M. Satoh
Thin Solid Films   243-344 594-597   1999   [Refereed]
Effect of Electron Incidence in Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates
T. Inoue, Y. Yamamoto and M. Satoh
Proc. Mat. Res. Soc. Symp.   474 321-326   1997   [Refereed]
Low Temperature Epitaxial Growth of CeO2(110) Layers on Si(100) Using Bias Evaporation
T. Inoue, Y. Yamamoto and M. Satoh
Proc. Mat. Res. Soc. Symp.   441 535-540   1997   [Refereed]
M. Satoh, Y. Yamamoto and T. Inoue
Nucl. Instrum. & Method. Proc. 10th Int. Conf. IBMM   127/128 166-169   1997   [Refereed]
Y. Yamamoto, M. Satoh and T. Inoue
Jpn. J. Appl. Phys.   36 L133-L135   1997   [Refereed]
T. Inoue, Y. Yamamoto and M. Satoh
Jpn. J. Appl. Phys.   35 L1685-L1688   1996   [Refereed]
H. Kudo, A. Sakamoto, S. Yamamoto, Y. Aoki, H. Naramoto, T. Inoue, M. Satoh, Y. Yamamoto, K. Umezawa and S. Seki
Jpn. J. Appl. Phys.   35 L1538-L1541   1996   [Refereed]
T. Inoue, Y. Yamamoto, M. Satoh, A. Ide and S. Katsumata
Thin Solid Films   281-282(1-2) 24-27   1995   [Refereed]
No heat assistance crystallinity improvement of epitaxial CeO2/Si by high energy ion irradiation
M. Satoh, Y. Sone, Y. Yamamoto, T. Inoue and H. Kudo
Nucl. Instrum. & Method. Proc. 9th Int. Conf. IBMM   1085-1088   1995   [Refereed]
Morphological Evolution with Layer Thickness in Single Crystal CeO2(110)/Si(100)
T. Inoue, Y. Yamamoto, M. Satoh and T. Ohsuna
Proc. Mat. Res. Soc. Symp.   367 323-329   1995   [Refereed]
H. Kudo, T. Fukusho, A. Tanabe, T. Ishihara, T. Inoue, M. Satoh, Y. Yamamoto and S. Seki
Jpn. J. Appl. Phys.   34 615-619   1995   [Refereed]
T. Nakazawa, T. Inoue, M. Satoh and Y. Yamamoto
Jpn. J. Appl. Phys.   34 548-553   1995   [Refereed]
Study on Epitaxial Growth of CeO2(110)/Si(100) in Conjunction with Substrate off-orientation
T. Inoue, Y. Yamamoto, M. Satoh, T. Ohsuna, H. Myoren and T. Yamashita
Proc. Mat. Res. Soc. Symp.   341 101-106   1994   [Refereed]
T. Inoue, Y. Yamamoto, M. Satoh, T. Hoshi and K. Miyoshi
Jpn. J. Appl. Phys.   33 L751-L753   1994   [Refereed]
T. Inoue, H. Kudo, T. Fukusho, T. Ishihara and T. Ohsuna
Jpn. J. Appl. Phys.   33 L139-L142   1994   [Refereed]
Crystallographic Analysis (110)CeO2/(100)Si using RBS/ Channeling Technique
M. Satoh, Y. Yamamoto, S. Nakajima, Y. Sakurai, T. Inoue, and T. Ohsuna
Proc. Mat. Res. Soc. Symp.   312 309-314   1993   [Refereed]
T. Inoue, T. Ohsuna, Y. Obara, Y. Yamamoto, M. Satoh and Y. Sakurai
J. Cryst. Growth   131 347-351   1993   [Refereed]
RBS/ Channeling Study of the Crystallographic Correlation for Epitaxial CeO2 on Si
Y. Yamamoto, M. Satoh, Y. Sakurai, T. Inoue, and T. Ohsuna
Jpn. J. Appl. Phys.   32 L620-L623   1993   [Refereed]
T. Inoue, T. Ohsuna, Y. Obara, Y. Yamamoto, M. Satoh and Y. Sakurai
Jpn. J. Appl. Phys.   32 1765-1767   1993   [Refereed]
Texture Structure Analysis and Crystalline Quality Improvement of CeO2(110) Layers Grown on Si(100) Substrates
T. Inoue, T. Ohsuna, Y. Yamada, K. Wakamatsu, Y. Itoh, T. Nozawa, E. Sasaki, Y. Yamamoto, and Y. Sakurai
Jpn. J. Appl. Phys.   31 L1736-L1739   1992   [Refereed]
Orientation Dependent Epitaxial Growth of CeO2 on Si
T. Inoue, T. Ohsuna, Y. Yamamoto, Y. Sakurai, L. Luo, X. D. Wu, C. J. Maggiore
Proc. Mat. Res. Soc. Symp   237 589-594   1991   [Refereed]
T. Inoue, T. Ohsuna, L. Luo, X. D. Wu, C. J. Maggiore, Y. Yamamoto, Y. Sakurai, and J. H. Chang
Appl. Phys. Lett.   59 3604-3606   1991   [Refereed]
L. Luo, X. D. Wu, R. C. Dye, R. E. Muenchauson, S. R. Folton, Y. Coulter, C. J. Maggiore, and T. Inoue
Appl. Phys. Lett.   59 2043-2045   1991   [Refereed]
T. Inoue, M. Osonoe, H. Tohda, M. Hiramatsu, Y. Yamamoto, A. Yamanaka, and T. Nakayama
J. Appl. Phys.   69 8313-8315   1991   [Refereed]
H. Hazama, M. Takahashi, S. Kambayashi, M. Kemmochi, K. Tsuchiya, Y. Iida, K. Yano, T. Inoue, M. Yoshimi, T. Yoshii, and H. Tango
IEEE Trans. Electron Devices   38 47-54   1991   [Refereed]
T. Inoue, Y. Yamamoto, S. Koyama, S. Suzuki and Y. Ueda
Appl. Phys. Lett.   56 1332-1333   1990   [Refereed]
K. Suguro, Y. Nakasaki, T. Inoue, S. Shima, and M. Kashiwagi
Thin Solid Films   166 1-14   1988   [Refereed]
SOI Recrystallization using a Multiply Separated Seed Structure
S. Kambayashi, T. Inoue, M. Kemmochi, I. Higashinakagawa, and T. Yoshii
Extended Abstracts 19th Conf. Solid State Devices and Materials   187-190   1987   [Refereed]
T. Inoue and T. Hamasaki
Appl. Phys. Lett.   50 971-973   1987   [Refereed]
T. Hamasaki, T. Inoue, M. Yoshimi, T. Yoshii, and H. Tango
J. Appl. Phys.   (62) 126-130   1987   [Refereed]
Multi-level SOI Recrystallization using a Novel Seed Structure
T. Hamasaki, T. Inoue, M. Yoshimi, T. Yoshii, and H. Tango
Extended Abstracts 18th Conf. Solid State Devices and Materials   569-572   1986   [Refereed]
T. Hamasaki, T. Inoue, I. Higashinakagawa, T. Yoshii, and H. Tango
J. Appl. Phys.   59 2971-2976   1986   [Refereed]
Thermal Cleaning of Si Surface in Ultra-high Vacuum
Y. Mikata, T. Inoue, S. Takasu, T. Usami, T. Ohta, and H. Hirano
Proc. 1st Int. Symp. Silicon Molecular Beam Epitaxy   45-56   1985   [Refereed]
K. Suguro, T. Inoue, T. Hamasaki, T. Yoshii, M. Yoshimi, M. Takahashi, K. Taniguchi, M. Kashiwagi, and H. Tango
App. Phys. Lett.   47 696-699   1985   [Refereed]
Amplitude Modulated Pseudo-line Electron Beam Recrystallization for Large Area SOI Growth
T. Hamasaki, T. Inoue, I. Higashinakagawa, T. Yoshii, M. Kashiwagi, and H. Tango
Extended Abstracts 17th Conf. Solid State Devices and Materials   135-138   1985   [Refereed]
Electron-beam Recrystallization of Silicon Layers on Silicon Dioxide
T. Inoue, K. Shibata, K. Kato, T. Yoshii, I. Higashinakagawa, K. Taniguchi, and M. Kashiwagi
Proc. Mat. Res. Soc. Symp.   23 523-531   1984   [Refereed]
T. Inoue and K. Shibata
Microelectron. J.   14 74-81   1983   [Refereed]
Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing
T. Inoue, K. Shibata, K. Kato, Y. Mikata, and M. Kashiwagi
Extended Abstracts 15th Conf. Solid State Devices and Materials   93-96   1983   [Refereed]
Y. Ohmura, T. Inoue, and T. Yoshii
J. Appl. Phys.   (54) 6779-6781   1983   [Refereed]
Y. Ohmura, K. Shibata, T. Inoue, T. Yoshii, and Y. Horiike
IEEE Electron Device Lett.   EDL-4 57-59   1983   [Refereed]
Growth of Large-grained Silicon on Insulator by Electron beam Annealing and Performance of MOS Devices
K. Shibata, Y. Ohmura, T. Inoue, K. Kato, Y. Horiike, and M. Kashiwagi
Jpn. J. Appl. Phys. Suppl.   22(1) 213-216   1983   [Refereed]
Stripe-shaped Crystal Growth and its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
K. Shibata, T. Inoue, and T. Takigawa
Jpn. J. Appl. Phys.   21 L294-L296   1982   [Refereed]
Characterization of Defects in As Implanted and Laser Annealed Si Layer together with electrical Properties of As Atoms
K. Shibata, T. Inoue, and M. Kashiwagi
Jpn. J. Appl. Phys.   21 1111-1116   1982   [Refereed]
Improvement of SOS Device Performance by Solid Phase Epitaxy
T. Yoshii, S. Taguchi, T. Inoue, and H. Tango
Jpn. J. Appl. Phys. Suppl.   21(1) 175-179   1982   [Refereed]
K. Shibata, T. Inoue, T. Takigawa, and S. Yoshii
Appl. Phys. Lett.   39 645-647   1981   [Refereed]
Y. Ohmura, T. Inoue, and T. Yoshii
Solid State Commun.   37 583-585   1981   [Refereed]
T. Inoue and T. Yoshii
Nucl. Instrum. Method.   182/183 683-690   1981   [Refereed]
T. Inoue and K. Koike
Appl. Phys. Lett.   33 826-827   1978   [Refereed]
Y. Ohmura, T. Inoue, and Y. Yamamoto
J. Appl. Phys.   49 3597-3599   1978   [Refereed]
`A New MOS Process using MoSi2 as a Gate Material
T. Mochizuki, K. Shibata, T. Inoue, and K. Ohuchi
Jpn. J. Appl. Phys. Suppl.   17(1) 37-42   1978   [Refereed]
Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
Y. Yamamoto, H. Enami, T. Itoh, and T. Inoue
Jpn. J. Appl. Phys.   16 213-214   1977   [Refereed]
`Electron Irradiation Effect in the Quantitative Analysis of PSG
INOUE Tomoyasu
Jpn. J. Appl. Phys.   16 851-852   1977   [Refereed]
Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI
T. Inoue, S. Horiuchi, H. Iwai, H. Shimizu, T. Ishida
Jpn. J. Appl. Phys. Suppl.   15 63-69   1976   [Refereed]
Auger Studies of Diffused Impurity Profiles in SiO2/Si and Poly Si/SiO2/Si Structures
T. Inoue, S. Horiuchi, S. Yoshii, and Y. Tanuma
J. Jpn. Soc. Appl. Phys. Suppl.   44 329-337   1975   [Refereed]
Observation of Impurity Profile in Ion Implanted Silicon by Auger Electron Spectroscopy
T. Inoue, Y. Ohmura, K. Koike, and T. Yoshioka
Jpn. J. Appl. Phys. Suppl.   2(2) 819-822   1974   [Refereed]

Misc

 
T. Inoue, H. Ohtake, J. Otani and S. Shida
Electochem. Soc. Trans.   155(11) G237-G240   2008
Orientation selective epitaxial growth by reactive dc magnetron sputtering with substrate bias
Tomoyasu Inoue
Research Development on Crystal Growth   4 251-268   2005
Epitaxial growth of CeO2 layers on Si substrates: low temperature growth by electron-beam-assisted evaporation
Research Trends   4 61-75    2001
Nucl. Instrum. & Method.   148(1/4) 798-802   1999
Electron Beam Irradiation Effect on Epitaxial Growth of CeO2(110) Layers on Si(100) Substrates
12 18-25   1999

Books etc

 
Developments in Hybrid Orientation Technology by Electron Beam Induced Orientation Selective Epitaxial Growth
INOUE Tomoyasu and Shida Shigenari (Part:Joint Work)
Mar 2015   
Spatially Varied Orientation Selective Epitaxial Growth of (100) and (110) CeO2 Layers on Si(100) Substrates using Absorbed Electron Imaging System
INOUE Tomoyasu, Igarashi Nobuyuki, Kanno Yuki and Shida Shigenari (Part:Joint Work)
Mar 2011   
Electron-beam Recrystallization of Silicon Layers on Silicon Dioxide
Proceedings of Material Research Society Symposium, Boston, 1983   1984   
Translation from "VLSI Technology" edited by S. M. Sze
1985   
Electron Beam Recrystallized SOI Structures
KTK Scientific Publishers Tokyo, 1985   1985   

Works

 
United States Patent Method of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the same May 24,1988 Patent Number 4,746,803
1988
United States Patents A method of forming a single crystal semiconductor layer from a non-crystalline material May 5,1987 Patent Number 4,662,949
1987
United States Patent Method of manufacturing a semiconductor device involving a capacitor Apr. 7,1987 Patent Number 4,656,054
1987
United State Patents Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy Feb. 12,1985 Patent Number 4,498,226
1985
United States Patent Recrystallized three dimensional integrated circuit Sep. 18,1984 Patent Number 4,472,729
1984

Research Grants & Projects

 
Hybrid orientation structure formation by electron beam induced orientation selective epitaxial growth
Project Year: Apr 2011 - Mar 2013    Investigator(s): Tomoyasu Inoue
Study on two dimensional control of orientation selective epitaxial growth of oxide thin films
Project Year: Apr 2008 - Mar 2011    Investigator(s): Tomoyasu Inoue
Epitaxial Growth of CeO2 on Si Substrates
Project Year: Apr 1995 - Mar 1998
Epitaxial Growth of CeO2 on Si Substrates
Crystalline Quality Improvement and Crystallographic Analysis using High Energy Ion Beams

Patents

 
Semiconductor device and manufacturing method thereof
United States Patent, January 2008, APG045416 USA-A