Ohtsuki Tomi

J-GLOBAL         Last updated: Feb 26, 2019 at 03:08
Ohtsuki Tomi
Sophia University
Faculty of Science and Technology, Department of Engineering and Applied Sciences
Job title
Doctor of Philosophy(The University of Tokyo)
Research funding number


I took ph.D on the quantum Hall effect at Univ. Tokyo.
I studied numerical scaling methods while working at PTB Germany as a post doctral fellow.
I developed scaling of the level statistics at Osaka and Toho universities.
After moving to Sophia University, I have been studing the localization and conductance scaling properties. The main focus of recent research is on the topological insulators and superconductors.

Awards & Honors

Apr 2018
2017 Highly cited article, The Physical Society of Japan
Winner: Tomoki Ohtsuki and Tomi Ohtsuki
Oct 2017
Outstanding Presentation Award, Japan Society for Simulation Technology
Nov 2016
JAPAN, Award JPSJ Papers of Editor's Choice, The Physical Society of Japan
Feb 2015
New Journal of Physics Highlights of 2014, Institute of Physics Publishing
Winner: Keith Slevin and Tomi Ohtsuki

Published Papers

Keith Slevin, Tomi Ohtsuki
Journal of the Physical Society of Japan   87(9) 094703-1-094703-6   Aug 2018   [Refereed]
The transfer matrix method is inherently serial and is not well suited to modern massively parallel supercomputers. The obvious alternative is to simulate a large ensemble of hypercubic systems and average. While this permits taking full advantage...
X. Luo, T. Ohtsuki, R. Shindou
Physical Review B   98 020201-1-020201-5   Jul 2018   [Refereed]
We clarify unconventional forms of the scaling functions of conductance, critical conductance distribution, and localization length in a disorder-driven quantum phase transition between band insulator and Weyl semimetal phases. Quantum criticality...
Xunlong Luo, Baolong Xu, Tomi Ohtsuki, Ryuichi Shindou
Physical Review B   97 045129-1-045129-21   Jan 2018   [Refereed]
In electronic band structure of solid-state material, two band-touching points with linear dispersion appear in pairs in the momentum space. When they annihilate each other, the system undergoes a quantum phase transition from a three-dimensional ...
Tomohiro Mano, Tomi Ohtsuki
Journal of the Physical Society of Japan   86(11) 113704   Oct 2017   [Refereed]
The three-dimensional Anderson model is a well-studied model of disordered electron systems that shows the delocalization–localization transition. As in our previous papers on two- and three-dimensional (2D, 3D) quantum phase transitions [J. Phys....
Tomi Ohtsuki, Tomoki Ohtsuki
Journal of the Physical Society of Japan   86(4) 044708   Mar 2017   [Refereed]
Three-dimensional random electron systems undergo quantum phase transitions and show rich phase diagrams. Examples of the phases are the band gap insulator, Anderson insulator, strong and weak topological insulators, Weyl semimetal, and diffusive ...


Phase diagrams of random electron systems obtained by multilayer convolutional neural network
53(8) 447-454   Aug 2018   [Refereed][Invited]
We review the new method of obtaining the phase diagrams of quantum phase transitions in random electron systems. The method is based on the image recognition using the multilayer convolutional neural network, deep learning. Applications to the ...

Books etc

Conductor-Insulator Quantum Phase Transitions
Ohtsuki Tomi (Part:Joint Work)
Oxford University Press   Jul 2012   ISBN:978-0-19-959259-3
『Quantum materials : lateral semiconductor nanostructures, hybrid systems and nanocrystals』 (Nanoscience and technology)
Ohtsuki Tomi (Part:Joint Work, 272-302)
Springer   May 2010   ISBN:978-3-642-10552-4
Metal-insulator transition in disordered election systems
Ohtsuki Tomi (Part:Joint Work)
May 2000   ISBN:4320033876
Metal - insulator transitions
Ohtsuki Tomi (Part:Joint Translation)
Maruzen   Jun 1996   ISBN:462104186X

Association Memberships