Katsuhiro Yokota - My portal - researchmap

Profile Information

Affiliation: Former Institution / Organization Kansai University Faculty of Engineering Science Department of Electrical and Electronic Engineering

Degree: Master of Engineering
Doctor of Engineering

J-GLOBAL ID: 200901078045305098
researchmap Member ID: 1000108604

External link: http://semicon.densi.kansai-u.ac.jp

Research Interests

13

Research History

8

Misc.

35

Neutralization and Discharge of Electron Traps in Hydrogenated Diamond-Like Carbon Films Deposited on A Ground Electrode of Plasma Enhanced Chemical Vapor Deposition

Japan Journal of Applied Physics, Vol. 46, 2007
Very low dielectric constants of diamond-like carbon films deposited on ground electrode by plasma-enhanced chemical vapor deposition

K Yokota, Y Miyoshi, M Saoyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 45(2A) 860-867, Feb, 2006
Dielectric Constants on Mixture Thin Films of Barium Carbide and Barium-Nitrate Deposited on Silicon Wafers Using Barium Carbonate Electron Beam Evaporation Assisted by Nitrogen Molecular and Ion Beams

Japan Journal of Applied Physics, Vol. 45, No.12, pp.9129-9136, 2006
Effects of Hydrogen Atoms on Redistribution of Implanted Boron Atoms in Silicon during Annealing

Ion Implantation Technology (AIP, Melville, 2006), p.291-294., 2006
Effects of oxygen ion beam application on crystalline structures of TiO2 films deposited on Si wafers by an ion beam assisted deposition

K Yokota, Y Yano, K Nakamura, M Ohnishi, F Miyashita

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 242(1-2) 393-395, Jan, 2006
Ion beam current dependence of compositions and resistivities on titanium nitride films deposited onto silicon by an ion beam assisted deposition method

K Yokota, T Kasuya, K Nakamura, M Ohnishi, F Miyashita

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 242(1-2) 390-392, Jan, 2006
Deposition of titanium nitride films onto silicon by an ion beam assisted deposition method

K Yokota, K Nakamura, T Kasuya, K Mukai, M Ohnishi

THIN SOLID FILMS, 473(2) 340-345, Feb, 2005
Properties of BaTiO3 Films with SiO2 Layers formed by Direst Deposition on Si Substrates using Low-Energy Oxygen-Ion Beams

Japan Journal of Applied Physics, Vol. 44, No.12, pp.8544-8546, 2005
Annealing effect on enlargement of grain size in nanocrystalline silicon films deposited by silicon evaporation with oxygen and argon radicals

K Nakamura, M Hirata, K Yokota

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 44(1B) 701-704, Jan, 2005
Diminution of the activity of B atoms by H-induced defects in H-2 and B2H6 co-implanted Si

K Yokota, S Nakase, K Nakamura, F Miyashita, M Tannjou, S Sakai, H Takano

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27(1-3) 129-132, Jul, 2004
Resistivities of titanium nitride films prepared onto silicon by an ion beam assisted deposition method

K Yokota, K Nakamura, T Kasuya, K Mukai, M Ohnishi

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 37(7) 1095-1101, Apr, 2004
シリコンの分子線エピタキシー(MBE)プロセスにおける基板のサーマルクリニーング温度の低温化

真空, 47(4), p.324-327, 2004
Deposition and Properties of Titanium Oxy-Nitride Films on Stainless Steel under Application of Ionized Nitrogen Molecules

6, p.51-69, 2004
Redistribution of P Atoms in Oxidized P-Implanted Silicon during Annealing

J. Mat. Sci. Materials in Electronics,, 15 (6), p.455-461, 2004
The Permittivity and Crystalline Size of TiO2 Films Deposited on Silicon by Use of Ionized O2,

Tran. Mat. Res. Soc. Jpn., 29 (2), p.627-630, 2004
Effects of ion beam application on the deposition of low-resistivity titanium nitride films onto silicon

K Yokota, K Nakamura, T Kasuya, K Mukai

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(6) 1820-1828, Nov, 2003
Titanium oxy-nitride films deposited on stainless steel by an ion beam assisted deposition technique

Journal of Materials Science,, 38(7), p.2011-2018, 2003
PHASE COMPOSITION AND CRYSTALLINE STRACTURE OF TITANIUM NITRIDE DEPOSITED ON SILICON BY AN ION BEAM ASSISTED DEPOSITION TECHNIQUE

Phys. Res.,, B166, p.82-86, 2003
Annealing of silicon implanted with arsine and hydrogen ions

K Yokota, S Nakase, K Nakamura, M Tannjou, K Matsuda, H Takano

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 195(2) 396-400, Jan, 2003
Activation of C atoms implanted into GaAs annealed with highly as-doped a-Si : H films

K Yokota, K Nakamura, M Sakaguchi, H Takano, Y Sekine, M Watanabe

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 149(10) G593-G597, Oct, 2002

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Books and Other Publications

1

新世代工学シリーズ、半導体デバイス工学(オーム社)

Professional Memberships

11

Works

9

半導体中の微量不純物分布に関する研究

1990 - 2002
Redistribution of implanted impurities in semiconductors during annealing

1990 - 2002
半導体中への微量不純物添加における水素の存在に関する研究

1990 - 2001
Chemical interaction between implanted impurities and hydrogen in silicon during annealing

1990 - 2001
半導体中への微量不純物添加技術に関する研究

1990 - 2000
High sensitive analysis of very small quanty impurities in semiconductors

1990 - 2000
「インターネットとものづくり」

2000
「発明の名称」薄膜の硬度測定
「発明の名称」薄膜コンデンサ

Research Projects

8

Industrial Property Rights

5