KOIDE Yasuo


KOIDE Yasuo

J-GLOBAL         Last updated: Dec 9, 2019 at 00:40
 
Avatar
Name
KOIDE Yasuo
Affiliation
National Institute for Materials Science
Job title
Associate Professor
Degree
Doctor of Engineering
ORCID ID
0000-0001-8321-9822

Education

 
 
 - 
1982
Faculty of Engineering, Toyohashi University of Technology
 
 
 - 
1987
Graduate School, Division of Engineering, Nagoya University
 

Academic & Professional Experience

 
2014
   
 
NIMS
 

Research Areas

 
 

Published Papers

 
Jiangwei Liu, Hirotaka Ohsato, Bo Da, Yasuo Koide.
IEEE Journal of the Electron Devices Society   7 561-565   2019   [Refereed]
© 2019 IEEE. Planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated on a single-crystalline diamond substrate. The ratio between the height of the la...
Zilong Zhang, Haihua Wu, Liwen Sang, Jian Huang, Yukiko Takahashi, Linjun Wang, Masataka Imura, Satoshi Koizumi, Yasuo Koide, Meiyong Liao
Carbon   152 788-795   Nov 2019
© 2019 Elsevier Ltd Single-crystal diamond (SCD) is a promising material for micro-electromechanical system (MEMS) devices to achieve high performance and reliability due to its prominent mechanical and physical properties. However, the applicatio...
Liwen Sang, Bing Ren, Raimu Endo, Takuya Masuda, Hideyuki Yasufuku, Meiyong Liao, Toshihide Nabatame, Masatomo Sumiya, Yasuo Koide
Applied Physics Letters   115    Oct 2019
© 2019 Author(s). The Mg doping efficiency is found to be drastically enhanced in the p-GaN films grown on the free-standing GaN substrates by metal organic chemical vapor deposition. The free hole concentrations are five and ten times higher in t...
Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono
Microelectronic Engineering   216    Aug 2019
© 2019 Elsevier B.V. We investigated the influence of post-deposition annealing (PDA) temperature on the characteristics of Pt/Al2O3/n-β-Ga2O3 MOS capacitors. Electrical properties such as the flatband voltage (Vfb) shift, Vfb hysteresis, fixed ch...
Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide
AIP Advances   9    Aug 2019
© 2019 Author(s). Interfaces in Al2O3/n-GaN capacitors fabricated on free-standing GaN substrates were investigated using sub-bandgap photo-assisted capacitance-voltage measurements. After post-metallization annealing (PMA) at 300 °C, the metal-ox...
J. W. Liu, H. Oosato, B. Da, T. Teraji, A. Kobayashi, H. Fujioka, Y. Koide
Journal of Physics D: Applied Physics   52    May 2019
© 2019 IOP Publishing Ltd. Operations for hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) after annealing at 500 °C are investigated. SiOx films are employed as oxide insulators for the H-diamond MOSFE...
Meiyong Liao, Liwen Sang, Takehiro Shimaoka, Masataka Imura, Satoshi Koizumi, Yasuo Koide
Advanced Electronic Materials   5    May 2019
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics...
Bing Ren, Jijun Zhang, Meiyong Liao, Jian Huang, Liwen Sang, Yasuo Koide, Linjun Wang
Optics Express   27 8935-8942   Mar 2019
© 2019 Optical Society of America. The authors report on a high-performance metal-semiconductor-metal (MSM) photodetector fabricated on the Cd 0.96 Zn 0.04 Te single crystal with the photoresponse from visible to near infrared region. Benefitting...
Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide
Japanese Journal of Applied Physics   58    Mar 2019
© 2019 The Japan Society of Applied Physics. The crystallinity of an n-doped free-standing GaN wafer sliced from a GaN crystal grown on a GaN template with a mask pattern was characterized by 71Ga NMR. The quadrupolar frequency determined from the...
Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide
Physical Review Applied   11    Feb 2019
© 2019 Authors. We investigate the local structures of a GaN substrate through an energy-resolved white X-ray diffraction topography method. A section topography geometry is implemented at various sample positions for the purpose of wafer mapping....
Bing Ren, Meiyong Liao, Masatomo Sumiya, Jin Su, Xinke Liu, Yasuo Koide, Liwen Sang
Journal of Physics D: Applied Physics   52    Feb 2019
© 2018 IOP Publishing Ltd. We report on a high-quality p-GaN metal-insulator-semiconductor (MIS) capacitors with sharp interface morphology and the lowest interface trap density by using SiN x as the gate dielectric layer. Transmission electron m...
Meiyong Liao, Liwen Sang, Tokuyuki Teraji, Satoshi Koizumi, Yasuo Koide
Advanced Materials Technologies   4    Feb 2019
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim All-electrical nano-electromechanical or micro-electromechanical systems (NEMS/MEMS) with integrated sensing and actuation are essential to fulfill the functionalities of single-crystal diamond (...
Kazuya Yuge, Toshihide Nabatame, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Tomoji Ohishi
Semiconductor Science and Technology   34    Jan 2019
© 2019 IOP Publishing Ltd. This work investigated characteristics of Al 2 O 3 /native oxide/n-GaN MOS capacitors by post-metallization annealing (PMA). A native oxide interlayer which composed of ϵ- and γ-Ga 2 O 3 phases (Native oxide) and the re...
Jaemyung Kim, Okkyun Seo, Chulho Song., Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm   21 2281-2285   Jan 2019
© The Royal Society of Chemistry. We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography. X-ray rocking curve images and full-width at half maxima images of a 2 inch GaN wafer were obtaine...
Meiyong Liao, Yasuo Koide, Liwen Sang
Topics in Applied Physics   121 91-121   Jan 2019
© Springer Nature Switzerland AG 2019. Micro- or nanoelectromechanical system (MEMS/NEMS) has witnessed explosive growth with applications spanning from automotive, consumer, industry, military, to biotechnology in the past decades. Presently, MEM...
Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata
CrystEngComm   21 4036-4041   Jan 2019
© 2019 The Royal Society of Chemistry. We have observed anisotropic mosaicity of an m-plane GaN homoepitaxial layer by X-ray diffraction topography imaging over a wafer and X-ray rocking curves measured at various wafer points. Crystal domains wer...
Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata, Yasuo Koide
Japanese Journal of Applied Physics   58    Jan 2019
© 2019 The Japan Society of Applied Physics. The effect of hydrogen on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors was investigated by capacitance-voltage (C-V) measurements. The results showed that hydrogen exposure shifted the C-V curves t...
Imura Masataka, Ota Yuichi, Banal Ryan G., Liao Meiyong, Nakayama Yoshiko, Takeguchi Masaki, Koide Yasuo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   215(21)    Nov 2018   [Refereed]
Irokawa Yoshihiro, Mitsuishi Kazutaka, Nabatame Toshihide, Kimoto Koji, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   57(11)    Nov 2018   [Refereed]
Ren Bing, Sumiya Masatomo, Liao Meiyong, Koide Yasuo, Liu Xinke, Shen Yue, Sang Liwen
JOURNAL OF ALLOYS AND COMPOUNDS   767 600-605   Oct 2018   [Refereed]
Wu Haihua, Sang Liwen, Li Yumeng, Teraji Tokuyuki, Li Tiefu, Imura Masataka, You Jianqiang, Koide Yasuo, Toda Masaya, Liao Meiyong
PHYSICAL REVIEW MATERIALS   2(9)    Sep 2018   [Refereed]
Irokawa Yoshihiro, Mitsuishi Kazutaka, Suzuki Taku T., Yuge Kazuya, Ohi Akihiko, Nabatame Toshihide, Ohnishi Tsuyoshi, Kimoto Koji, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   57(9)    Sep 2018   [Refereed]
Kim Jaemyung, Seo Okkyun, Song Chulho, Hiroi Satoshi, Chen Yanna, Irokawa Yoshihiro, Nabatame Toshihide, Koide Yasuo, Sakata Osami
APPLIED PHYSICS EXPRESS   11(8)    Aug 2018   [Refereed]
Seo Okkyun, Kim Jae Myung, Song Chulho, Lou Yanfang, Kumara L. S. R., Hiroi Satoshi, Chen Yanna, Katsuya Yoshio, Irokawa Yoshihiro, Nabatame Toshihide, Koide Yasuo, Sakata Osami
AIP ADVANCES   8(7)    Jul 2018   [Refereed]
Lou Yanfang, Song Chulho, Chen Yanna, Kumara Loku Singgappulige Rosantha, Palina Natalia, Seo Okkyun, Hiroi Satoshi, Kajiwara Kentaro, Hoshino Masato, Uesugi Kentaro, Irokawa Yoshihiro, Nabatame Toshihide, Koide Yasuo, Sakata Osami
CRYSTENGCOMM   20(20) 2861-2867   May 2018   [Refereed]
Sang Liwen, Ren Bing, Liao Meiyong, Koide Yasuo, Sumiya Masatomo
JOURNAL OF APPLIED PHYSICS   123(16)    Apr 2018   [Refereed]
Wu Kongping, Liao Meiyong, Sang Liwen, Liu Jiangwei, Imura Masataka, Ye Haitao, Koide Yasuo
JOURNAL OF APPLIED PHYSICS   123(16)    Apr 2018   [Refereed]
J. W. Liu, H. Oosato, M. Y. Liao, M. Imura, E. Watanabe, Y. Koide
Applied Physics Letters   112    Apr 2018
© 2018 Author(s). Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fab...
Imura Masataka, Tsuda Shunsuke, Takeda Hiroyuki, Nagata Takahiro, Banal Ryan G., Yoshikawa Hideki, Yang AnLi, Yamashita Yoshiyuki, Kobayashi Keisuke, Koide Yasuo, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Wang Ke, Araki Tsutomu, Nanishi Yasushi
JOURNAL OF APPLIED PHYSICS   123(9)    Mar 2018   [Refereed]
Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm   20 7761-7765   Jan 2018
© 2018 The Royal Society of Chemistry. We have investigated the crystal quality of a 4-inch GaN wafer by X-ray diffraction topography. GaN (1124) diffraction images at various incident angles were obtained to determine the image of maximum intensi...
Ashutosh Kumar, Kazutaka Mitsuishi, Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide
Nanoscale Research Letters   13    Jan 2018
© 2018, The Author(s). Inefficient Mg-induced p-type doping has been remained a major obstacle in the development of GaN-based electronic devices for solid-state lighting and power applications. This study reports comparative structural analysis o...
Irokawa Yoshihiro, Suzuki Taku T., Yuge Kazuya, Ohi Akihiko, Nabatame Toshihide, Kimoto Koji, Ohnishi Tsuyoshi, Mitsuishi Kazutaka, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   56(12)    Dec 2017   [Refereed]
T. Teraji, J. Isoya, K. Watanabe, S. Koizumi, Y. Koide
Materials Science in Semiconductor Processing   70 197-202   Nov 2017
© 2017 Elsevier Ltd Homoepitaxial diamond films were grown by chemical vapor deposition using ultrahigh vacuum (UHV)-compatible deposition systems. Optimized growth conditions with oxygen added to the source gas enabled long-duration homoepitaxial...
Aoki Toshichika, Teraji Tokuyuki, Koide Yasuo, Shiojima Kenji
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING   70 207-212   Nov 2017   [Refereed]
Banal Ryan G., Imura Masataka, Ohata Hirohito, Liao Meiyong, Liu Jiangwei, Koide Yasuo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214(11)    Nov 2017   [Refereed]
Mitsuishi Kazutaka, Kimoto Koji, Irokawa Yoshihiro, Suzuki Taku, Yuge Kazuya, Nabatame Toshihide, Takashima Shinya, Ueno Katsunori, Edo Masaharu, Nakagawa Kiyokazu, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   56(11)    Nov 2017   [Refereed]
Wu Haihua, Sang Liwen, Teraji Tokuyuki, Li Tiefu, Wu Kongping, Imura Masataka, You Jianqiang, Koide Yasuo, Liao Meiyong
CARBON   124 281-287   Nov 2017   [Refereed]
T. Teraji, A. Fiori, N. Kiritani, S. Tanimoto, E. Gheeraert, Y. Koide
Journal of Applied Physics   122    Oct 2017
© 2017 Author(s). Current transport at p-diamond Schottky contacts under reverse bias operation was investigated. Reverse current transport modes of several types were observed depending on the bias voltage range: thermionic emission (TE) associat...
Sang Liwen, Ren Bing, Sumiya Masatomo, Liao Meiyong, Koide Yasuo, Tanaka Atsushi, Cho Yujin, Harada Yoshitomo, Nabatame Toshihide, Sekiguchi Takashi, Usami Shigeyoshi, Honda Yoshio, Amano Hiroshi
APPLIED PHYSICS LETTERS   111(12)    Sep 2017   [Refereed]
Tsuchiya Takashi, Imura Masataka, Koide Yasuo, Terabe Kazuya
SCIENTIFIC REPORTS   7    Sep 2017   [Refereed]
Liu Jiangwei, Ohsato Hirotaka, Liao Meiyong, Imura Masataka, Watanabe Eiichiro, Koide Yasuo
IEEE ELECTRON DEVICE LETTERS   38(7) 922-925   Jul 2017   [Refereed]
J. W. Liu, M. Y. Liao, M. Imura, R. G. Banal, Y. Koide
Journal of Applied Physics   121    Jun 2017
© 2017 Author(s). The wide bandgap semiconductor diamond has been studied to develop high-power and high-frequency electronic devices. Here, high dielectric constant (high-k) TiO2/Al2O3bilayers are deposited on hydrogenated diamond (H-diamond) cha...
J. W. Liu, H. Oosato, M. Y. Liao, Y. Koide
Applied Physics Letters   110    May 2017
© 2017 Author(s). Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated with an Y2O3oxide insulator grown on the H-diamond directly using an electron beam evaporator....
Ren Bing, Liao Meiyong, Sumiya Masatomo, Wang Linjun, Koide Yasuo, Sang Liwen
APPLIED PHYSICS EXPRESS   10(5)    May 2017   [Refereed]
Imura Masataka, Tsuda Shunsuke, Nagata Takahiro, Banal Ryan G., Yoshikawa Hideki, Yang Anli, Yamashita Yoshiyuki, Kobayashi Keisuke, Koide Yasuo, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Wang Ke, Araki Tsutomu, Nanishi Yasushi
JOURNAL OF APPLIED PHYSICS   121(9)    Mar 2017   [Refereed]
Banal Ryan G., Imura Masataka, Tsuya Daiju, Iwai Hideo, Koide Yasuo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   214(2)    Feb 2017   [Refereed]
Liao Meiyong, Toda Masaya, Sang Liwen, Teraji Tokuyuki, Imura Masataka, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   56(2)    Feb 2017   [Refereed]
Imura Masataka, Banal Ryan G., Liao Meiyong, Liu Jiangwei, Aizawa Takashi, Tanaka Akihiro, Iwai Hideo, Mano Takaaki, Koide Yasuo
JOURNAL OF APPLIED PHYSICS   121(2)    Jan 2017   [Refereed]
Jiangwei Liu, Yasuo Koide
Methods in Molecular Biology   1572 217-232   Jan 2017
© Springer Science+Business Media LLC 2017. Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobi...
Zhang Kexiong, Liao Meiyong, Imura Masataka, Nabatame Toshihide, Ohi Akihiko, Sumiya Masatomo, Koide Yasuo, Sang Liwen
APPLIED PHYSICS EXPRESS   9(12)    Dec 2016   [Refereed]
Zhang Kexiong, Liao Meiyong, Sumiya Masatomo, Koide Yasuo, Sang Liwen
JOURNAL OF APPLIED PHYSICS   120(18)    Nov 2016   [Refereed]
Liu Jiangwei, Ohsato Hirotaka, Wang Xi, Liao Meiyong, Koide Yasuo
SCIENTIFIC REPORTS   6    Oct 2016   [Refereed]
J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
Journal of Applied Physics   120    Sep 2016
© 2016 Author(s). A band configuration of a high-k ZrO2/Al2O3 bilayer on hydrogenated diamond (H-diamond), a breakdown field (EB) of the ZrO2/Al2O3 bilayer, and an effect of gate-drain distance (dG-D) on electrical properties of ZrO2/Al2O3/H-diamo...
Banal Ryan G., Imura Masataka, Liu Jiangwei, Koide Yasuo
JOURNAL OF APPLIED PHYSICS   120(11)    Sep 2016   [Refereed]
Zhang Kexiong, Sumiya Masatomo, Liao Meiyong, Koide Yasuo, Sang Liwen
SCIENTIFIC REPORTS   6    Mar 2016   [Refereed]
Ji Tao, Liu Qian, Zou Rujia, Sun Yangang, Xu Kaibing, Sang Liwen, Liao Meiyong, Koide Yasuo, Yu Li, Hu Junqing
ADVANCED FUNCTIONAL MATERIALS   26(9) 1400-1410   Mar 2016   [Refereed]
Inoue Daisuke, Miura Atsushi, Nomura Tsuyoshi, Fujikawa Hisayoshi, Sato Kazuo, Ikeda Naoki, Tsuya Daiju, Sugimoto Yoshimasa, Koide Yasuo
IEICE TRANSACTIONS ON ELECTRONICS   E99C(3) 358-364   Mar 2016   [Refereed]
Zhao Jing, Liu Jiangwei, Sang Liwen, Liao Meiyong, Coathup David, Imura Masataka, Shi Baogui, Gu Changzhi, Koide Yasuo, Ye Haitao
APPLIED PHYSICS LETTERS   108(1)    Jan 2016   [Refereed]
Verveniotis Elisseos, Okawa Yuji, Makarova Marina V., Koide Yasuo, Liu Jiangwei, Smid Bretislav, Watanabe Kenji, Taniguchi Takashi, Komatsu Katsuyoshi, Minari Takeo, Liu Xuying, Joachim Christian, Aono Masakazu
PHYSICAL CHEMISTRY CHEMICAL PHYSICS   18(46) 31600-31605   2016   [Refereed]
Teraji Tokuyuki, Yamamoto Takashi, Watanabe Kenji, Koide Yasuo, Isoya Junichi, Onoda Shinobu, Ohshima Takeshi, Rogers Lachlan J., Jelezko Fedor, Neumann Philipp, Wrachtrup Joerg, Koizumi Satoshi
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   212(11) 2365-2384   Nov 2015   [Refereed]
J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, Y. Koide
Journal of Applied Physics   118    Sep 2015
© 2015 AIP Publishing LLC. Normally on/off operation in hydrogenated diamond (H-diamond) metal-insulator-semiconductor field-effect transistors (MISFETs) is reproducibly controlled by annealing at 180 °C. The transfer characteristics of the MISFET...
Banal Ryan G., Imura Masataka, Koide Yasuo
AIP ADVANCES   5(9)    Sep 2015   [Refereed]
Liu Jiangwei, Liao Meiyong, Imura Masataka, Oosato Hirotaka, Watanabe Eiichiro, Koide Yasuo
DIAMOND AND RELATED MATERIALS   54 55-58   Apr 2015   [Refereed]
Sang Liwen, Liao Meiyong, Koide Yasuo, Sumiya Masatomo
JOURNAL OF APPLIED PHYSICS   117(10)    Mar 2015   [Refereed]
Liao Meiyong, Liu Jiangwei, Sang Liwen, Coathup David, Li Jiangling, Imura Masataka, Koide Yasuo, Ye Haitao
APPLIED PHYSICS LETTERS   106(8)    Feb 2015   [Refereed]
Tokuyuki Teraji, Takashi Yamamoto, Kenji Watanabe, Yasuo Koide, Junichi Isoya, Shinobu Onoda, Takeshi Ohshima, Lachlan J. Rogers, Fedor Jelezko, Philipp Neumann, Jörg Wrachtrup, Satoshi Koizumi
Physica Status Solidi (A) Applications and Materials Science   212    Jan 2015
Liao Meiyong, Toda Masaya, Sang Liwen, Hishita Shunichi, Tanaka Shuji, Koide Yasuo
APPLIED PHYSICS LETTERS   105(25)    Dec 2014   [Refereed]
Fiori Alexandre, Teraji Tokuyuki, Koide Yasuo
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   211(10) 2363-2366   Oct 2014   [Refereed]
A. Fiori, T. Teraji, Y. Koide
Applied Physics Letters   105    Sep 2014
© 2014 AIP Publishing LLC. The stabilization by vacuum annealing of tungsten carbide/p-diamond Schottky barrier diodes (SBDs) has been investigated. The Schottky barrier height (B) and ideality factor (n), at high temperature, were consistently es...
Liu Jiangwei, Liao Meiyong, Imura Masataka, Tanaka Akihiro, Iwai Hideo, Koide Yasuo
SCIENTIFIC REPORTS   4    Sep 2014   [Refereed]
J. Alvarez, M. Boutchich, J. P. Kleider, T. Teraji, Y. Koide
Journal of Physics D: Applied Physics   47    Sep 2014
The origin of the high leakage current measured in several vertical-type diamond Schottky devices is conjointly investigated by conducting probe atomic force microscopy and confocal micro-Raman/photoluminescence imaging analysis. Local areas chara...
J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide
Applied Physics Letters   105    Aug 2014
A diamond logic inverter is demonstrated using an enhancement-mode hydrogenated-diamond metal-insulator-semiconductor field effect transistor (MISFET) coupled with a load resistor. The gate insulator has a bilayer structure of a sputtering-deposit...
J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, Y. Koide
Journal of Physics D: Applied Physics   47    Jun 2014
A Ta2O5/Al2O3bilayer gate oxide with a high-dielectric constant (high-k) has been successfully applied to a hydrogenated-diamond (H-diamond) metal-insulator-semiconductor field effect transistor (MISFET). The Ta2O5layer is prepared by a sputtering...
Yamasaki Satoshi, Gheeraert Etienne, Koide Yasuo
MRS BULLETIN   39(6) 499-503   Jun 2014   [Refereed]
Tian Wei, Zhang Chao, Zhai Tianyou, Li Song-Lin, Wang Xi, Liu Jiangwei, Jie Xiao, Liu Dequan, Liao Meiyong, Koide Yasuo, Golberg Dmitri, Bando Yoshio
ADVANCED MATERIALS   26(19) 3088-3093   May 2014   [Refereed]
Teraji Tokuyuki, Koide Yasuo, Ito Toshimichi
THIN SOLID FILMS   557 241-248   Apr 2014   [Refereed]
Sang Liwen, Liao Meiyong, Liang Qifeng, Takeguchi Masaki, Dierre Benjamin, Shen Bo, Sekiguchi Takashi, Koide Yasuo, Sumiya Masatomo
ADVANCED MATERIALS   26(9) 1414-1420   Mar 2014   [Refereed]
Cermak Jan, Koide Yasuo, Takeuchi Daisuke, Rezek Bohuslav
JOURNAL OF APPLIED PHYSICS   115(5)    Feb 2014   [Refereed]
Y. Koide, M. Imura, J. Liu, M. Y. Liao
European Microwave Week 2014: "Connecting the Future", EuMW 2014 - Conference Proceedings; EuMIC 2014: 9th European Microwave Integrated Circuits Conference   149-153   Jan 2014
© 2014 European Microwave Association-EUMA. In order to control the high-density hole carrier in hydrogenated diamond surface, diamond FETs using AlN/diamond heterojunction structure and high-k gate oxide dielectric are demonstrated.
Rujia Zou, Zhenyu Zhang, Junqing Hu, Liwen Sang, Yauso Koide, Meiyong Liao
Nanotechnology   24    Dec 2013
Photodetectors fabricated from one-dimensional semiconductors are always dominated by the surface states due to their large surface-to-volume ratio. Therefore, the basic 5S requirements (high sensitivity, high signal-to-noise ratio, high spectral ...
M. Imura, S. Tsuda, T. Nagata, H. Takeda, M. Y. Liao, A. L. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, Y. Nanishi
Applied Physics Letters   103    Oct 2013
The electronic structures of Mg-doped InN (Mg-InN) epilayers with the Mg concentration, [Mg], ranging from 1 × 1019 to 5 × 10 19 cm-3 were systematically investigated by soft and hard X-ray photoelectron spectroscopies. The angle-resolved results ...
Liu Jiangwei, Cheng Shaoheng, Liao Meiyong, Imura Masataka, Tanaka Akihiro, Iwai Hideo, Koide Yasuo
DIAMOND AND RELATED MATERIALS   38 24-27   Sep 2013   [Refereed]
J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, Y. Koide
Journal of Applied Physics   114    Aug 2013
In order to search a gate dielectric with high permittivity on hydrogenated-diamond (H-diamond), LaAlO3 films with thin Al 2O3 buffer layers are fabricated on the H-diamond epilayers by sputtering-deposition (SD) and atomic layer deposition (ALD) ...
J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
Applied Physics Letters   103    Aug 2013
A normally-off hydrogenated-diamond (H-diamond) field effect transistor (FET) using a HfO2 gate oxide is demonstrated. The HfO2 gate oxide has a bilayer structure which is fabricated by a sputter-deposition (SD) technique on a thin buffer layer pr...
Sang Liwen, Hu Junqing, Zou Rujia, Koide Yasuo, Liao Meiyong
SCIENTIFIC REPORTS   3    Aug 2013   [Refereed]
Sang Liwen, Liao Meiyong, Koide Yasuo, Sumiya Masatomo
JAPANESE JOURNAL OF APPLIED PHYSICS   52(8)    Aug 2013   [Refereed]
Imura Masataka, Gautam Ujjal, Nakajima Kiyomi, Koide Yasuo, Amano Hiroshi, Tsuda Kenji
JAPANESE JOURNAL OF APPLIED PHYSICS   52(8)    Aug 2013   [Refereed]
Imura Masataka, Tsuda Shunsuke, Nagata Takahiro, Takeda Hiroyuki, Liao Meiyong, Yang AnLi, Yamashita Yoshiyuki, Yoshikawa Hideki, Koide Yasuo, Kobayashi Keisuke, Yamaguchi Tomohiro, Kaneko Masamitsu, Uematsu Nao, Araki Tsutomu, Nanishi Yasushi
JOURNAL OF APPLIED PHYSICS   114(3)    Jul 2013   [Refereed]
Teraji Tokuyuki, Taniguchi Takashi, Koizumi Satoshi, Koide Yasuo, Isoya Junichi
APPLIED PHYSICS EXPRESS   6(5)    May 2013   [Refereed]
J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, Y. Koide
Journal of Applied Physics   113    Mar 2013
CaF2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF 2/H-diamond heterojunction are investigated by ...
J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, Y. Koide
Applied Physics Letters   102    Mar 2013
HfO2 films have been deposited on hydrogen-terminated diamond (H-diamond) by an atomic layer deposition (ALD) technique at 120 °C. Effect of rapid thermal annealing treatment on electrical properties of Au/Ti/Pd/ALD-HfO2/H-diamond metal-oxide-semi...
J. W. Liu, M. Y. Liao, M. Imura, Y. Koide
Applied Physics Letters   101    Dec 2012
High-k oxide insulators (Al2O3and HfO2) have been deposited on a single crystalline hydrogenated diamond (H-diamond) epilayer by an atomic layer deposition technique at temperature as low as 120 °C. Interfacial electronic band structures are chara...
Cheng Shaoheng, Sang Liwen, Liao Meiyong, Liu Jiangwei, Imura Masataka, Li Hongdong, Koide Yasuo
APPLIED PHYSICS LETTERS   101(23)    Dec 2012   [Refereed]
Boutchich Mohamed, Alvarez Jose, Diouf Djicknoum, Roca i Cabarrocas Pere, Liao Meiyong, Masataka Imura, Koide Yasuo, Kleider Jean-Paul
JOURNAL OF NON-CRYSTALLINE SOLIDS   358(17) 2110-2113   Sep 2012   [Refereed]
Liao Meiyong, Sang Liwen, Teraji Tokuyuku, Imura Masataka, Alvarez Jose, Koide Yasuo
JAPANESE JOURNAL OF APPLIED PHYSICS   51(9)    Sep 2012   [Refereed]
Teraji Tokuyuki, Taniguchi Takashi, Koizumi Satoshi, Watanabe Kenji, Liao Meiyong, Koide Yasuo, Isoya Junichi
JAPANESE JOURNAL OF APPLIED PHYSICS   51(9)    Sep 2012   [Refereed]
T. Teraji, M. Y. Liao, Y. Koide
Journal of Applied Physics   111    May 2012
Electric properties of the lateral-type tungsten carbide/p-diamond (100) Schottky diodes were investigated. At the lower voltage below 10 V, the reverse current density J R increased steeply and then became saturate at a certain value. This satura...
Liao Meiyong, Rong Zouwen, Hishita Shunichi, Imura Masataka, Koizumi Satoshi, Koide Yasuo
DIAMOND AND RELATED MATERIALS   24 69-73   Apr 2012   [Refereed]
Watanabe Eiichiro, Conwill Arolyn, Tsuya Daiju, Koide Yasuo
DIAMOND AND RELATED MATERIALS   24 171-174   Apr 2012   [Refereed]

Patents

 
US20130043213A1 : METHOD FOR PRODUCING SINGLE-CRYSTAL DIAMOND MOVABLE STRUCTURE
LIAO MEIYONG, KOIDE YASUO, HISHIDA SHUNICHI
WO2011102474A1 : SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF
LIAO MEIYONG, KOIDE YASUO, HISHIDA SHUNICHI
EP2540877A1 : SINGLE CRYSTAL DIAMOND MOVABLE STRUCTURE AND MANUFACTURING METHOD THEREOF
LIAO MEIYONG, KOIDE YASUO, HISHIDA SHUNICHI
US20100289031A1 : DIAMOND SEMICONDUCTOR DEVICE
TERAJI Tokuyuki KOIZUMI Satoshi, KOIDE Yasuo
US20110045173A1 : DIAMOND UV-SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV-SENSOR UNIT, AND METHOD OF TREATING DIAMOND SINGLE CRYSTAL
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez, KLEIDER Jean-Paul
EP2246896A1 : DIAMOND UV SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV SENSOR DEVICE, DIAMOND SINGLE CRYSTAL PROCESSING METHOD
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez, KLEIDER Jean-Paul
WO2009099233A1 : DIAMOND UV SENSOR ELEMENT AND MANUFACTURING METHOD THEREOF, UV SENSOR DEVICE, DIAMOND SINGLE CRYSTAL PROCESSING METHOD
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez, KLEIDER Jean-Paul
WO2009005134A1 : DIAMOND SEMICONDUCTOR DEVICE
TERAJI Tokuyuki KOIZUMI Satoshi, KOIDE Yasuo
US20090134403A1 : DIAMOND ULTRAVIOLET SENSOR
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez
EP2169709A1 : DIAMOND SEMICONDUCTOR DEVICE
TERAJI Tokuyuki KOIZUMI Satoshi, KOIDE Yasuo
US20100090226A1 : DIAMOND UV-RAY SENSOR
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez
EP2169709A4 : DIAMOND SEMICONDUCTOR DEVICE
TERAJI Tokuyuki KOIZUMI Satoshi, KOIDE Yasuo
WO2007015431A1 : DIAMOND UV-RAY SENSOR
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez
WO2006087937A1 : DIAMOND SEMICONDUCTOR RECTIFIER ELEMENT
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez
WO2006057246A1 : DIAMOND ULTRAVIOLET SENSOR
KOIDE Yasuo, LIAO Meiyong, JOSE Antonio Alvarez
EP0674348 : II-VI Group compound semiconductor device and method for manufacturing the same
CN1553478 : GaN related compound semiconductor device and process for producing the same
EP0845818 : GaN related compound semiconductor device and process for producing the same
EP1251567 : GaN related compound semiconductor and process for producing the same
TW563207B : N-type electrode for III nitride-system compound semiconductor element, III nitride-system compound semiconductor element, and method for producing the same
CN1473356 : n-electrode for III group nitride based compound semiconductor element
EP1424725 : ELECTRODE FOR p-TYPE SiC
EP1424726 : N-ELECTRODE FOR III GROUP NITRIDE BASED COMPOUND SEMICONDUCTOR ELEMENT
KR100436102B : METHOD OF MANUFACTURING GaN BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING LIGHT TRANSMITTING ELECTRODE WITH IMPROVED ELECTRICAL AND OPTICAL PROPERTIES
KR100478076B : PROCESS FOR PRODUCING A GAN RELATED COMPOUND SEMICONDUCTOR
EP0674347 : II-VI Group compound semiconductor device and method for manufacturing the same

Conference Activities & Talks

 
Wide Bandgap III-Nitride and Diamond Devices and Characterization [Invited]
Y. Koide
32nd IEEE International Conference on Microelectronic Test Structures, (ICMTS Conference)   2019   
Science and Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics [Invited]
O. Auciello, Elida de Obaldi, Jiangwei Liu, Y. Koide, Geunhee Lee
The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019)   2019   
Metal-insulator-metal-semiconductor (MIMS) field-effect transistors based on semiconductor diamond with controllable threshold voltages
Meiyong LIAO, Liwen SANG, Takehiro SHIMAOKA, Masataka IMURA, Satoshi KOIZUMI, Yasuo KOIDE.
The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019)   2019   
Selective growth of diamond (111) by metal mask and its application for hydrogen terminated diamond FET
Masataka IMURA, Hirotaka OOSATO, Meiyong LIAO, Yasuo KOIDE.
The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019)   2019   
Advanced diamond FET and MEMS devices [Invited]
Y. Koide
International Symposium on Single Crystal Diamond and Electronics (SCDE2019)   2019   
Ultra-high quality factors and high-reliability diamond mechanical resonators on diamond
Meiyong LIAO, ウ ハイファ, Liwen SANG, Masataka IMURA, Tokuyuki TERAJI, Yasuo KOIDE.
The 13th International Conference on New Diamond and Nano Carbon (NDNC 2019)   2019   
In-situ Control of Hole Density in Hydrogen-Terminated Diamond Achieved with All-Solid-State Electric Double Layer Transistor
Takashi TSUCHIYA, Makoto TAKAYANAGI, Masataka IMURA, Yasuo KOIDE, Toru HIGUCHI, Kazuya TERABE.
22nd International Conference on Solid State Ionics (SSI-22)   2019   
Influence of post-deposition annealing on electrical characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors
Masafumi HIROSE, Toshihide NABATAME, Kazuya YUGE, Erika MAEDA, Naoki IKEDA, Akihiko OHI, Yoshihiro IROKAWA, Hideo IWAI, Yasuo KOIDE, Hideyuki YASUFUKU, Satoshi KAWADA.
INFOS 2019   2019   
Science/Technology of Interface-Engineered High-K Dielectric Nanolaminate-Based Oxides / Diamond Films for New Generation High Power Electronics
Orlando Auciello, Elida de Obaldia, Jiangwei LIU, Yasuo KOIDE.
7th International Symposium on Integrated Functionalities   2019   
Electrical properties of hydrogenated diamond MOSFETs after annealing at 500 °C
Jiangwei LIU, Hirotaka OOSATO, Tokuyuki TERAJI, Bo DA, Yasuo KOIDE.
30th International Conference on Diamond and Carbon Materials   2019   
Characteristics of several High-k gate insulators for GaN power device
Toshihide NABATAME, Erika MAEDA, Mari INOUE, Masashi HIROSE, Hajime KIYONO, Yasuo KOIDE, Yoshihiro IROKAWA, Koji SHIOZAKI.
236th ECS Meeting   2019   
Magnetic Control of Electric Double Layer Transistor
T. Tsuchiya, M. Imura, Y. Koide, K Terabe
MANA International Symposium 2018   2018   
III-nitride/diamond heterojunction
M. Imura, M. Liao, Y. Koide
4th JST Sakura Science Workshop. 2018   2018   
Single crystal diamond MEMS: Concpet, Fabrication, and Applications
M. Liao, Y. Koide
International Conference on Expanding Frontiers of Carbon MEMS (CMEMS 2018)   2018   
Role of a native oxide interlayer on electrical characteristics of Al2O3/n-GaN capacitors
K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, L. Sang, T. Ohishi, Y. Koide
9th International SiGe Technology and Device Meeting (ISTDM)/11th International Conference on Silicon Epitaxy andHeterostructures (ICSI), Joint ISTDM/ISCI 2018 Conference   2018   
Logic circuits using depletion/Enhancement-modes H-diamond MOSFETs
Y. Koide, J. Liu, M. Imura, M. Liao
12th New Diamond and Nano Carbons Conference (NDNC 2018)   2018   
High-quality diamond epitaxial layer growth and electron devices application
Y. Koide, J. Liu, M. Imura, M. Liao
International Conference on Solid State Devices and Materials (SSDM 2018)   2018   
Analysis of deep traps at Al2O3/n-GaN interface using photo-assisted C-V measurement
K. Yuge, T. Nabatame, Y. Irokawa, A. Ohi, N. Ikeda, A. Uedono, S. Liwen, Y. Koide, T. Ohishi
International Conference on Solid State Devices and Materials (SSDM 2018)   2018   
Enhancement-mode hydrogenated diamond MOSFETs [Invited]
J. Liu, M. Liao, M. Imura, Y. Koide
29th International Conference on Diamond and Carbon Materials. (ICDCM 2018)   2018   
Band alignment of wurtzite BN related alloys
U. Ohuta, M. Imura, R. Banal, Y. Koide
International Workshop on Nitride Semiconductors 2018 (IWN2018)   2018   
Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography
KIM, Jaemyung, SEO, Okkyun, SONG, ChulHo, HIROI, Satoshi, CHEN, Yanna, IROKAWA, Yoshihiro, NABATAME, Toshihide, KOIDE, Yasuo, SAKATA, Osami
International Workshop on Nitride Semiconductors 2018 (IWN2018)   2018   
Comprehensive Study of Native Oxides on GaN(0001)
Y. Irokawa, K. Mitsuishi, T. Suzuki, K. Yuge,A. Ohi, T. Nabatame, T. Ohnishi, K. Kimoto, Y. Koide
International Workshop on Nitride Semiconductors 2018 (IWN2018)   2018   
Crystalline intermediate layers in oxides/GaN(0001
Y. Irokawa, K. Mitsuishi, T. Nabatame, K. Kimoto, and Y. Koide
International Workshop on Nitride Semiconductors 2018 (IWN2018)   2018   
Systematic investigation of surface and bulk electronic structures of unintentionally-doped InxGa1-xN (0≦x≦1) epilayers by hard X-ray photoelectron spectroscopy
M. Imura, T. Tsuda, T. Nagata, R. Banal, H. Yoshikawa, A. Yang, R. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, Y. Nanishi
International Workshop on Nitride Semiconductors 2018 (IWN2018)   2018   
Study of high-k gate insulator for GaN power device by atomic layer deposition
T. Nabatame, Y. Irokawa, K. Shiozaki, Y. Koide
31st International Microprocesses and Nanotechnology Conference   2018   
Development of AlN/Diamond heterostructure formation and unique interface property [Invited]
M. Imura, M. Liao, and Y. Koide
European Materials Research Society (EMRS) 2018 Fall Meeting   2018   
Depletion-/enhancement-mode hydrogenated-diamond MOSFETs and MOSFET logic circuits [Invited]
J.W. Liu, Y. Koide
4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap Semiconductors)   2018   
Electrical properties of H-terminated diamond FETs with AlN gate [Invited]
Y. Koide, R. G. Banal, M. Imura, J.W. Liu, and M.Y. Liao
4th E-MRS & MRS-J Symposium, Symposium 1, Nitrides and Diamond Materials and Devices (Wide Bandgap Semiconductors)   2018   
Electrical Properties of H-terminated Diamond FETs with AlN insulating material sputter-deposited under Ar+N2 Atmosphere [Invited]
M. Imura, R. Banal, J. Liu, M. Liao, Y. Koide
SBDD XXII 2017   2017   
High-current triple-gate H-diamond MOSFET.
Y. Koide, J. Liu, M. Liao, M. Imura
The 11th Conference on New Diamond and Nano Carbon Conference, (NDNC 2017)   2017   
Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111)
M. Imura, R. Banal, M. Liao, J. Liu, T. Aizawa, A. Tanaka, H. Iwai, T. Mano, Y. Koide
The 11th Conference on New Diamond and Nano Carbons (NDNC 2017)   2017   
Homoepitaxial chemical vapor deposition of diamond film for ultra-light doping
T. Teraji, J. Isoya, S. Koizumi, Y. Koide
The 11th International Conference on New Diamond and Nano Carbon (NDNC 2017)   2017   
D/E-mode control of diamond FETs and logic circuit demonstration [Invited]
Y. Koide
2017 International Symposium on Single Crystal Diamond and Electronics (2017 SCDE)   2017   
Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy
M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kanek, K. Wang, T. Araki, Y. Nanishi
12th International Conference on Nitride Semiconductors (ICNS 2017)   2017   
Diamond logic circuits with depletion- and enhancement-mode MOSFETs
J. Liu, H. Osato, M. Liao, M. Imura, E. Watanabe, Y. Koide
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
The influence of interface states on the CaF2/p-GaN metal-insulator-semiconductor capacitors
L. Sang, M. Liao, M. Sumiya, Y. Koide
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Strain and dislocations in the InGaN-based intermediate-band solar cel ls
L. Sang, M. Liao, M. Sumiya, Y. Koide
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Microstructure of Boron-doped AlN Epitaxial Layer Grown by Metal-Organic Vapor Phase Epitaxy
M. Imura, Y. Ota, R. Banal, Y. Koide
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Effect of surface hydrogen termination on the interface electronic properties of TiO2/diamond heterostructure
K. Wu, L. Sang, M. Imura, Y. Koide, M. Liao
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Interface states governed photoelectrical properties of diamond deep-ultraviolet detector
M. Liao, L. Sang, M. Imura, Y. Koide
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Mechanism of photoconductivity gain and persistent photoconductivity for diamond Deep-Ultraviolet photodetector
Y. Koide, M. Liao, M. Imura
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Fixed Charge and Trap States in Ni/Al2O3/GaN MIS Schottky Barrier Diodes for Power Device.
B. Ren, M. Liao, M. Sumiya, Y. Koide , L. Sang
29th International Conference on Defects in Semiconductors (ICDS 2017)   2017   
Updates on Nanotechnology Development in Japan 2016-2017
Y. Koide
14th Asia Nano Forum Summit (ANFOS 2017)   2017   
Normally-on/off control of diamond FETs and logic circuit demonstration [Invited]
Y. Koide, J.W. Liu, M. Imura, and M.Y. Liao
E-MRS   2017   
Development of normally-on/off diamond MOSFETs and logic circuits [Invited]
Y. Koide
Schulich Symposium   2017   
Surface effect and improvement of the quality factor of single crystal diamond NEMS resonators
M. Liao, H. Wu, L. Sang, T. Teraji, M. Imura, Y. Koide
28th International Conference on Diamond and Carbon Materials. (ICDCM 2017)   2017   
Fabrication of triple-gate hydrogenated diamond MOSFETs
J. Liu, H. Osato, X, Wang, M. Liao, Y. Koide
28th International Conference on Diamond and Carbon Materials. (ICDCM 2017)   2017   
Logic circuits with hydrogenated diamond MOSFETs
J. Liu, M. Liao, M. Imura, Y. Koide
28th International Conference on Diamond and Carbon Materials. (ICDCM 2017)   2017   
Improvement on electrical properties of H-terminated diamond FETs using sputter deposition AlN/ atomic layer deposition Al2O3
M. Imura, R. Banal, J. Liu, M. Liao, Y. Koide
28th International Conference on Diamond and Carbon Materials. (ICDCM 2017)   2017   
Semiconductor diamond: from fundamental to applications [Invited]
M. Liao, Y. Koide
The 8th Asia-Pacific Workshop on Widegap Semiconductors. (APWS 2017)   2017   
Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron
M. Imura, R. Banal, Y. Koide, Y. Nakayama, M Takeguchi, T. Shunsuke , T. Tabata, S. Nakagawa, Y. Honda, M. Yamaguchi, H. Amano
The 11th International Symposium on Semiconductor Light Emitting. 2017   2017   
Vacuum-Ultra-Violet Diamond-based Photodetector for high-power excimer lamp
M. Imura, M. Liao, Y. Koide
International Workshop on UV Materials and Devices 2017 (IWUMD 2017)   2017   
Electronic and optical properties of BAlN
Y. Ota, M Imura, R. Banal, Y. Koide
International Workshop on UV Materials and Devices 2017. (IWUMD 2017)   2017   
III-nitride/diamond hybrid systems
M. Imura, M. Liao, Y. Koide
3N-Lab Workshop Tsukuba-Grenoble for Diamond and GaN   2017   
Microstructure and electrical property of AlN/Diamond(111) heterojunction
M. Imura, M. Liao, Y. Koide
OIST Diamond WS (ODW 2017)   2017   
Depletion/Enhancement-modes control of H-diamond MOSFETs
Y. Koide
OIST Diamond WS (ODW 2017)   2017   
Ultra-high quality factor single crystal diamond MEMS resonators.
M. Liao, H. Wu, L. Sang, T. Tokuyuki, Y. Koide
OIST Diamond WS (ODW 2017)   2017   
High-k oxide gated diamond field effect transistor
J. LIU, L. Meiyong, M. Imura, Y. Koide
WCSM-2016   2016   
Enhancement mode hydrogenated diamond MISFETs
J. LIU, L. Meiyong, M. Imura, Y. Koide
MANA International Symposium 2016   2016   
Fabrication of Normally Off Diamond Metal-insulator-semiconductor field-effect transistors
J. LIU, L. Meiyong, M. Imura, Y. Koide
ICYS Workshop 2016   2016   
High-k TiO2 on Diamond for Electronic Devices: Capacitor Field-effect Transistor and Logic Inverter
J. LIU, L. Meiyong, M. Imura, R. Banal, Y. Koide
The 10th International Conference on New Diamond and Nano Carbon (NDNC2016)   2016   
Wide Bandgap III-Nitride and Diamond Materials and Devices [Invited]
Y. Koide
The 10th International Conference on New Diamond and Nano Carbon (NDNC2016)   2016   
Single Crystal Diamond Micromechanical and Nanomechanical Resonators
M.W. Liao, M Toda, S. Liwen, S. Hishita, M. Imura, S Tanaka, Y. Koide
The 10th International Conference on New Diamond and Nano Carbon (NDNC2016)   2016   
Diacetylene monolayers and aggregates self-assembled on atomically flat surfaces
E. Verveniotis, Y. Okawa, M. Marina Vadimovna, Y. Koide, J. Liu, B. Smid, K. Watanabe, T. Taniguchi, K. Komatsu, C. Joachim, M. Aono
MANA International Symposium 2017   2016   
Microscopically charged synthetic diamond as a functional interface for self-assembly of nanoparticles
E. Verveniotis, J. C., Y. Okawa, Y. Koide, A. K., B. R
2016 E-MRS Spring Meeting and Exhibit   2016   
Displacement Current of Au/p-type Diamond Schottky Contacts
T. Aoki, T. Teraji, Y. Koide, K. Shiojima
ISCSI-VII/ISTDM2016.   2016   
Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors
R.G. Banal, M. Imura, J. Liu, M. Liao, and Y. Koide
International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)   2016   
Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE
M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y. Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)   2016   
InGaN/GaN Heterostructure p-channel metal-oxide-semiconductor field effect transistor by using polarization-induced two-dimensional hole gas
K. Zhang, M. Sumiya, L. Meiyong, Y. Koide, S. Liwen
International Workshop on Nitride Semiconductors (IWN 2016)   2016   
Recent Developments in Diamond MOSFET Electronic Devices
J. Liu, L. Meiyong, M. Imura, Y. Koide
ICYS Workshop FY2016   2016   
Synthetic diamond thin films for electronics: functionalization electronic transport and possible applications
E. Verveniotis, CERMAK Jan, Y. Okawa, Y. Koide, KROMKA Alexander, LEDINSKY Martin, C. Joachim, REZEK Bohuslav
6th International Symposium on Transparent Conductive Materials   2016   
Influence of the surface termination on the ideality of diamond Schottky diodes
A. Fiori, T. Teraji, Jose Pinero, Daniel Araujo, Y. Koide
Hasselt Diamond Workshop 2015 SBDD XX   2015   
Atomic Layer Deposited High-k Insulators on Hydrogenated-diamond for Field Effect Transistors
J. LIU, L. Meiyong, M. Imura, Y. Koide
MANA International Symposium 2015   2015   
High-k Oxide Gate Diamond FETs [Invited]
Y. Koide
2015 MRS Spring Meeting   2015   
Diamond FETs using heterojunction and high-k dielectrics [Invited]
Y. Koide, J-W. Liu, M. Imura, and M-Y. Liao
7th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2015) / 8th International Conference on Plasma-Nano Technology & Science (IC-PLANTS2015   2015   
Hydrogenated-diamond MISFET logic inverter
J. LIU, L. Meiyong, M. Imura, Y. Koide
The 9th International Conference on New Diamonds and Nano Carbon (NDNC2015)   2015   
Impedance Spectroscopy of Diamond MOS Structure
M-Y. Liao, J. Liu, S. Liwen, D. Coatchup, J-L Li, M. Imura, H. Ye, Y. Koide
The 9th International Conference on New Diamonds and Nano Carbon (NDNC2015)   2015   
III-Nitrides and Diamond Devices [Invited]
Y. Koide
2015 International Symposium on Single Crystal Diamond and Electronics (2015 SCDE)   2015   
Diamond Field Effect Transisot, Deep-UV sensor, and MEMS Devices [Invited]
Y. Koide
2015 Collaborative Conference on 3D & Materials Research (2015 CC3DMR)   2015   
E and D-modes Diamond MOSFETs [Invited]
Y. Koide
OMNT, International Symposium on Diamond, Elavolation, Devices and Applications   2015   
H-Diamond MOSFETs with high-k oxide gate [Invited]
Y. Koide
3rd French-Japanese Workshop on Diamond Power Devices   2015   
Oxycarbide Formation for Ideal and Thermally Stable Diamond Schottky-barrier Diodes
A.J-Y. Fiori, T. Teraji, Y. Koide
3rd French-Japanese Workshop on Diamond Power Devices   2015   
Hole channel formation mechanism in AlN/diamond heterojunction and high-k oxide gate diamond FETs
Y. Koide, M. Imura, J. Liu, L. Meiyong, R. Banal, M. Takao, S. Naoya, I. Yuichi
International Conference on Diamond and Carbon Materials 2015 (ICDCM 2015)   2015   
Low-temperature AlN Buffer Layer Technique to Eliminate the Small-angle Grain Boundary in AlN Grown on Sapphire Substrate
R. Banal, M. Imura, Y. Koide
The 6th International Symposium on Growth of III-Nitrides (ISGN6)   2015   
Diamond MOSFETs with high-k gate oxides [Invited]
Y. Koide
2015 MRS Fall Meeting   2015   
Impedance Analysis of Hydrogen-Terminated Diamond MOS Structure
M-Y. Liao, J. Liu, S. Liwen, D. Coatchup, J-L. Li, M. Imura, Y. Koide, H. Ye
2015 MRS Fall Meeting   2015   
Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond
J. Liu, L. Meiyong, M. Imura, H. Oosato, E. Watanabe, Y. Koide
New Diamond and Nano Carbons Conference (NDNC 2014)   2014   
Fabrication of low on-resistance diamond field effect transistors
J. Liu, L. Meiyong, M. Imura, Y. Koide
New Diamond and Nano Carbons Conference (NDNC 2014)   2014   
Frequency dispersion properties at All2O3 and HfO2/H-terminated diamond interfaces
Y. Koide, J. Liu, L. Meiyong, M. Imura, H. Oosato, E. Watanabe
New Diamond and Nano Carbons Conference (NDNC 2014)   2014   
Diamond metal-insulator-semiconductor field effect transistor logic inverters
J. Liu, L. Meiyong, M. Imura, Y. Koide
2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014)   2014   
Diamond Electronic and Photonic Devices [Invited]
Y. Koide
2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014)   2014   
Multilevel intermediate-band solar cell based on III-Nitrides
S. Liwen, L. Meiyong, Y. Koide, M. Sumiya
The International Workshop on Nitride Semiconductors (IWN 2014)   2014   
HfO2 on hydrogenated-diamond for field effect transistors
J. Liu, L. Meiyong, M. Imura, Y. Koide
IUMRS-ICA 2014   2014   
Diamond Field Effect Transistors with high-k gate insulator [Invited]
Y. Koide
International Materials Research Congress (IMRC 2014)   2014   
Diamond FETs with high-k oxide gate dielectrics [Invited]
Y. Koide
International Conference on Diamond and Carbon Materials (ICDCM 2014)   2014   
High-k/hydrogenated-diamond metal-insulator-semiconductor field effect transistors fabrication
J. Liu, L. Meiyong, M. Imura, Y. Koide
International Conference on Diamond and Carbon Materials (ICDCM 2014)   2014   
Schottky-Barrier Inhomogeneities in WC/p-diamond at High Temperature
A. Fiori, T. Teraji, Y. Koide
International Conference on Solid State Devices and Materials 2014 (SSDM 2014)   2014   
Diamond Electronic Devices for Future Application [Invited]
Y. Koide
2014 Asia-Pacific Microwave Conference (APMC 2014)   2014   
Diamond FETs using heterojunction and high-k dielectrics [Invited]
Y. Koide
European Microwave Integrated Circuit Conferece (EUMIC 2014)   2014   
Atomic Layer Deposited HfO2/Al2O3 Multi-nano-layer on Diamond for Field Effect Transistor
J. Liu, L. Meiyong, M. Imura, Y. Koide
BIT'S 4th Annual World Congress of Nano Science & Technology 2014   2014   

Works

 
The 192nd Meeting of The Electrochemical Society, Inc. And the 48th Annual Meeting of the International Society of Electrochemistry. Paris, (France)
1997
1st Symp. on Diamond Electronics Devices, Osaka(Japan) Abst. p. 28
1996
2nd Int. Symp. on Control of Semiconductor Interfaces, Karuizawa(Japan), Abst. B5-5, P・45
1996
5th Int. Conf. on New Diamond and Technology, Tours(France) Abst. 11.090,
1996
7th Int. Conf. on (]G0002[)-(]G0005[) Compounds and Devices. Edinburgh (UK), Abst. Fr9,
1995
Presentation in the 4th Int. Cont. on the Formation of Semiconductor Interfaces. J(]E88CE[)lich (Germany)
1993
1st Int. Conf. on Photo-Excited Processes and Applications. Sendai (Japan), Abst. p. 156
1993
1st Int. Symp. on Control of Semiconductor Interfaces , Karuizawa (Japan), Abst. A5
1993
Studies and Survey on Metal/Semicencluctor Ineertaees in "Protesinal Committee of Ultra Small Electrode Structure"
1993
10th Int. Conf. on Crystal Growth, San Diego (USA), Abst. p. 321
1992
3rd Int. Conf. on Vapor Growth and Epitaxy, Nagoya (Japan)Abst. p. 238
1991
1st Int. Conf. on atomically Controlled Surfaces and Interfaces, Tokyo (Japan), Abst. p. 142,
1991
3rd Int. Conf. Chemical Beam Epitaxy and Related Growth Techniques, Oxford (UK), Abst. F6,
1991
7th Int. Cont. on Vapor Growth and Epitaxy, Nagoya, (Japan), Abst. p.165
1991
3rd Int. Cont. on Formation of Semiconductor Interface, Rome (Italy), Abst. p. 89,
1991
5th Int. Cont. on Solid Films and Surfaces, Phode Island (USA) Abst. Session 14A,
1990
9th Int. Cont. on Crystal Growth, Sendai (Japan), Abst. p.5
1989
2nd Int. Cont. on Formation of Semiconductor Interface, Takarazuka (Japan), Abst. p. 161
1988
17th Int. Cont. on Solid State Devices and Materials, Tokyo (Japan), Abst. p. 6
1985

Research Grants & Projects

 
Development of Ohmic Contacts to GaN-Based Compound Semiconductors
Development of Ohmic Contacts to Silicon Carbide Semiconductors.
Schottky Contacts to Heteroepitaxial Semiconductor Diamonds

Awards & Honors

 
May 2008
Devices design in solar-blind diamond photodetectors, Outstanding Poser Award of NDNC2008, New Diamond & Nano Carbons
 
Apr 2004
International Scientist of The Year 2004, International Biography center, Cambridge, England
 

Misc

 
Y. Koide, H. Itoh, N. Sawaki, I. Akasaki, M. Hashimoto
Conference on Solid State Devices and Materials   6-7   Dec 1985
Epitaxial layers of Al//xGa//1// minus //xN were grown on sapphire(0001) and Si(111) substrate by MOVPE. By reducing the parasitic reactions of organometallic compounds with NH//3, the alloy composition of Al//xGa//1// minus //xN layers could be c...
Effects of AlN Buffer Layev on Gystallographic Structure and Electrical and Optical Properties of GaN and Ga1-XAlXN(0<X<0.4) Films Grown on Sapphive Substrate by MOVPE
J. Crystal Growth   98,209    1989
Solid Phase reactions and crystallographic structures in Zr/Si systems.
J. Applied Physics   68(12) 6304   1990
Growth processed in the initial stage of deposition of Ge films on (100)Si Surfaces by GeH4 Source Molecular Beam Epitaxy.
J. Crystal Growth   99 254   1990
Observation of Si-SiO2 interface states within the conduction band by tunneling current spectroscopy.
Applied Surface Science   56(58) 69   1992
Growth behaviors of the initial Ge two-dimensional layers on(100)Si substrates and photoirradiation effects by GeH4 Source molecular beam epitaxy.
Proc. of the 4th Inter. Conf. on Formation of Semiconductor Interfaces,   502   1994
Contact resistance between carbide and non-carbide forming metals and p-diamond
Diamond Flilms and Technology   6(2) 61   1996
J. Vacuum Science & Technobogy B   14(3) 1812   1996
The 1997 U. S workshop on the Physics and Chemistry of II-VI Materials.
California, U. S. A.   129   1997
Diamond and Related Materials   6(5/7) 847-851   1997
Dependence of electrical properties on surface treatments and work functions of metals contacting to p-type GaN.
J. Applied Physics   65(2) 1315   1997
Sohottky barriers of metals contacting to p-type ZnSe.
J. Applied Physics   65(9) 7241   1997
25th International Symposium on Compound Semiconductors(ISCS'98)
Nara, Japan      1998
40th Electronic Materials Conference, Charlottsvill.
Virginia, U. S. A.   12   1998
Third Pacific Rim International Conference on Advanced Materials and Processing(PRICM-3)
Hawaii, U. S. A      1998
"Electrical properties of P-ZnSe/metals interfaces with intermediate Semiconductor layers"
Proceedings of The Third Pacific Rim International Conference on Advanced Materials and Society   2519   1998