2018年4月
特異構造の結晶科学~結晶成長と構造・物性相関~窒化アルミニウム/ダイヤモンドヘテロ構造形成技術の開発と界面特異構造評価
日本結晶成長学会誌(CD-ROM)
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- 巻
- 45
- 号
- 1
- 開始ページ
- ROMBUNNO.45‐1‐05
- 終了ページ
- 記述言語
- 日本語
- 掲載種別
- 出版者・発行元
- 日本結晶成長学会
<p> Single-crystal AlN/diamond heterojunction with high-density interface hole channel was successfully obtained by metal-organic vapor phase epitaxy. AlN layer was epitaxially grown on hydrogen-terminated (H-)diamond(111) substrate. Thermal treatment of diamond substrate was carried out under hydrogen and ammonia mixture environment at 1250 ℃ just before AlN growth. This thermal treatment led to surface sheet hole density as high as ~1.0 × 10<sup>14</sup> cm<sup>-2</sup> without structural reconstruction of diamond surface. In addition, the use of smaller off-cut angle (0.20 ± 0.25°) H-diamond(111) substrate combined with this treatment enabled to obtain single-crystal epitaxial AlN layer, which simultaneously acted as passivation of the surface hole channel with such a high density. The AlN/H-diamond(111) hetero-junction revealed type-II staggered energy band configuration with valence band offset of ~2.0 eV, which is suitable for the fabrication of p-channel field-effect transistor using AlN-gate-insulator/ diamond heterojunction. These results are promising for the development of AlN/diamond hybrid power electronic devices.</p>
- リンク情報
- ID情報
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- ISSN : 2188-7268
- J-Global ID : 201802217571803588
- CiNii Articles ID : 130006727551
- identifiers.cinii_nr_id : 9000389440476