Investigation of gap states near conduction band edge in vicinity of interface between Mg-ion-implanted GaN and Al2O3 deposited after ultra-high-pressure annealing

Jpn. J. Appl. Phys. 62(SN) SN1002-1-SN1002-7 2023年7月  査読有り最終著者責任著者

Interface state density distribution near conduction band edge at Al₂O₃/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer

AIP Advances 12(12) 125224-1-125224-7 2022年12月1日  査読有り最終著者責任著者

Detection of defect levels in vicinity of Al2O3/ p-type GaN interface using sub-bandgaplight- assisted capacitance–voltage method

Journal of Applied Physics 132(19) 195302-1-195302-10 2022年11月16日  査読有り筆頭著者責任著者

X-ray photoelectron spectroscopy study on effects of ultra-high-pressure annealing on surface of Mg-ion-implanted GaN

Japanese Journal of Applied Physics 60(3) 036503-1-036503-8 2021年3月1日  査読有り筆頭著者責任著者

Low-temperature annealing behavior of defects in Mg-ion-implanted GaN studied using MOS diodes and monoenergetic positron beam

Japanese Journal of Applied Physics 60(1) 016502-1-016502-8 2021年1月1日  査読有り筆頭著者責任著者

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

Japanese Journal of Applied Physics 59(9) 096502-096502 2020年9月1日  査読有り筆頭著者責任著者

Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

physica status solidi (b) 257(2) 1900367-1900367 2020年2月  査読有り筆頭著者責任著者

Impact of Low-Temperature Annealing on Defect Levels Generated by Mg-Ion-Implanted GaN

Jpn. J. Appl. Phys. 58(SC) SCCB10-1-SCCB10-6 2019年6月  査読有り筆頭著者責任著者

Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before higherature annealing

AIP Advances 8(2) 025310-1-025310-7 2018年2月1日  査読有り筆頭著者責任著者

Impact of ultra-high-pressure annealing on interface state density distribution near conduction band at Al₂O₃/Mg-ion-implanted GaN interface

15th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials/ 16th International Conference on Plasma-Nano Technology & Science (ISPlasam2023/IC-PLANTS2023, Gifu University, Gifu, Japan, March 5–9, 2023) 2023年3月7日

A Defect Level Generated in GaN by High-Temperature Annealing with AlN Encapsulation

13th International Symposium on Advanced Science and its Application for Nitrides and Nanomaterials/14th International Conference on Plasma Nanotechnology and Science (ISPlasam2021/IC-PLANTS2021) 2021年3月9日

Impact of Cap-Layer Materials Used in Long-Term Low-Temperature Annealing on Electrical Properties of Mg-Ion Implanted GaN

62nd Electronic Materials Conference (EMC2020, Virtual Holding, June 24-26, 2020) 2020年6月25日