SARAIE Junji

J-GLOBAL         Last updated: Feb 15, 2008 at 00:00
 
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Name
SARAIE Junji
Affiliation
Former Institution / Organization Kyoto Institute of Technology Graduate School of Science and Technology
Job title
Professor
Degree
Doctor of Engineering(Kyoto University), Master of Engineering(Kyoto University), Bachelor of Engineering(Kyoto University)

Research Areas

 
 

Education

 
 
 - 
1968
Graduate School, Division of Engineering, Kyoto University
 
 
 - 
1966
Faculty of Engineering, Kyoto University
 

Committee Memberships

 
1999
   
 
Japan Society of Applied Physics  Director
 

Misc

 
Journal of Crystal Growth   95(1/4) 525-528   1989
Photo-CVD of Al2O3 thin films
Japanese Journal of Applied Physics   29(10) L1877-1880   1990
Low temperature growth of ZnSe by photoassisted molecular beam epitaxy
Japanese Journal of Applied Physics   29(9) L1585-L1587   1990
Laser irradiation during MBE growth of ZnSxSe1-x : a new growth parameter
Journal of Crystals Growth   101(1-4) 61-66   1990
Molecular beam epitaxial growth of ZnSSe with Hg-Xe lamp irradiation
Japanese Journal of Applied Physics   29(5) L723-L726   1990

Books etc

 
New functionality materials
Elsevier   1993   
Crystal Growth of SiC on AlN/sapphire by CVD method
Institute of Physics Conference Series NO. 137   1994   
Sublimation growth of 6H-SiC bulk
Inst. Physics Conf. Ser.   1996   
Sublimation growth of cubic SiC bulk
Inst. Physics Conf. Ser.   1996   
Growth of cubic SiC on Si substrate by CVD using Hexa-methyldisilane and hexachlorodisilane
Inst. Phys. Conf. Ser.   1996   

Research Grants & Projects

 
MBE growth of nanostructures of II-VI compound semiconductors
Grants and Funding
MBE growth of InN
very thin insulating films on Si
Grants and Funding
MBE growth of GaNAsBi
Crystal Growth of Compound Semiconductors