Junji Saraie - My portal - researchmap

Profile Information

Affiliation: Professor, Former Institution / Organization Kyoto Institute of Technology Graduate School of Science and Technology

Degree: Doctor of Engineering(Kyoto University)
Master of Engineering(Kyoto University)
Bachelor of Engineering(Kyoto University)

J-GLOBAL ID: 200901017549738808
researchmap Member ID: 1000162956

Research Interests

6

Research Areas

3

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment /
Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /
Natural sciences / Semiconductors, optical and atomic physics /

Education

4

- 1968

Kyoto University
- 1968

Graduate School, Division of Engineering, Kyoto University
- 1966

Faculty of Engineering, Kyoto University
- 1966

Faculty of Engineering, Kyoto University

Committee Memberships

2

1999

理事, 応用物理学会
1999

Director, Japan Society of Applied Physics

Misc.

113

Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

M Yoshimoto, H Yamamoto, W Huang, H Harima, J Saraie, A Chayahara, Y Horino

APPLIED PHYSICS LETTERS, 83(17) 3480-3482, Oct, 2003
Metastable GaAsBi alloy grown by molecular beam epitaxy

M Yoshimoto, S Murata, A Chayahara, Y Horino, J Saraie, K Oe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(10B) L1235-L1237, Oct, 2003
Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen

M Yoshimoto, H Yamamoto, W Huang, H Harima, J Saraie, A Chayahara, Y Horino

APPLIED PHYSICS LETTERS, 83(17) 3480-3482, Oct, 2003
Metastable GaAsBi alloy grown by molecular beam epitaxy

M Yoshimoto, S Murata, A Chayahara, Y Horino, J Saraie, K Oe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 42(10B) L1235-L1237, Oct, 2003
Fabrication of quantum dots of II-VI semiconductors and application to light-emitting devices

Junji Saraie, Nobuo Matsumura

Shinku/Journal of the Vacuum Society of Japan, 46(2) 111-115, 2003
Fabrication of InN/Si heterojunctions with rectisfying characteristics

phys.stat.sol.(C), 1-4, 2003
Growth conditions in molecukar beam epitany for controlling CdSeTe epilayer conposition

J.Criptal Growth, (251.602-606), 2003
Ⅱ－Ⅵ族半導体量子ドットの作製と発光デバイスへの応用

真空協会誌, (46) 111-115, 2003
Fabrication of InN/Si heterojunctions with rectisfying characteristics

phys.stat.sol.(C), 1-4, 2003
Growth conditions in molecukar beam epitany for controlling CdSeTe epilayer conposition

J.Criptal Growth, (251.602-606), 2003
Fabrication of quantum dots of II-VI semiconductors and application to light-emitting devices

Junji Saraie, Nobuo Matsumura

Shinku/Journal of the Vacuum Society of Japan, 46(2) 111-115, 2003
Composition control of CdSeTe layers grown by molecular beam epitaxy

Nobuo Matsumura, Takuya Sakamoto, Junji Saraie

Journal of Crystal Growth, 237-239(1-4) 1550-1553, Apr, 2002
Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy

J.Crystal Grwoth, 237-239, pp.1536-1540, 2002
Fabrication of ZnSe diodes with CdSe quantum-dot layers by molecular beam epitaxy

phys.stat.sol.(b), 229, pp.1039-1042, 2002
Composition control of CdSeTe layers grown by molecular beam epitaxy

J.Crystal Growth, 237-239, pp.1550-1553, 2002
Fabrication of wurtzite quantum-well structures of CdSe/ZnCdSe by molecular beam epitaxy

J.Crystal Grwoth, 237-239, pp.1536-1540, 2002
Fabrication of ZnSe diodes with CdSe quantum-dot layers by molecular beam epitaxy

N. Matsumura, H. Endo, J. Saraie

Physica Status Solidi (B) Basic Research, 229(2) 1039-1042, 2002
Photoluminescence of self-assembled CdSe quantum dots by molecular beam epitaxy

J.Crystal Growth, 227-228, pp.1121-1125, 2001
GaAsP pn diode on Si substrate grown by metalorganic molecular beam epitaxy for visible light-emitting devices

Jpn.J.Appl.Phys., 40, pp3953-3959, 2001
Direct observation of polytype domains in GaN using a cryogenic scanning photoluminescence microscope with sub-micron spacial resolution

Jpn.J.Appl.Phys., 40, pp.3159-3160, 2001

More

Books and Other Publications

14

MBE growth of InN on Si toward hole-barrier structure in Si devices

IPAP Conf.Series 1,, 2000
MBE growth of InN on Si toward hole-barrier structure in Si devices

IPAP Conf.Series 1,, 2000
Topmost surface analysis of 6H-SiC (0001) by coaxial impact collision ion scattaring spectroscopy

Inst. Phys. Conf. Ser., 1996
Growth of cubic SiC on Si substrate by CVD using Hexa-methyldisilane and hexachlorodisilane

Inst. Phys. Conf. Ser., 1996
Sublimation growth of cubic SiC bulk

Inst. Physics Conf. Ser., 1996
Sublimation growth of 6H-SiC bulk

Inst. Physics Conf. Ser., 1996
Topmost surface analysis of 6H-SiC (0001) by coaxial impact collision ion scattaring spectroscopy

Inst. Phys. Conf. Ser., 1996
Growth of cubic SiC on Si substrate by CVD using Hexa-methyldisilane and hexachlorodisilane

Inst. Phys. Conf. Ser., 1996
Sublimation growth of cubic SiC bulk

Inst. Physics Conf. Ser., 1996
Sublimation growth of 6H-SiC bulk

Inst. Physics Conf. Ser., 1996
Crystal Growth of SiC on AlN/sapphire by CVD method

Institute of Physics Conference Series NO. 137, 1994
Crystal Growth of SiC on AlN/sapphire by CVD method

Institute of Physics Conference Series NO. 137, 1994
New functionality materials

Elsevier, 1993
New functionality materials

Elsevier, 1993

Professional Memberships

7

Research Projects

14