The silicon core and carbon mantle particles were produced by using the advanced carbon coating method which enables direct covering with the carbon layer using an electron microscope. The growth of SiC crystal was observed upon heating at 500degreesC in vacuum. The growth process of SiC on both the carbon layer and silicon particles was directly observed by in situ observation. The inward movement of carbon into silicon began at the twinned part. The growth rate of SiC on the carbon mantle layer was estimated from in situ images and found to be 8 times faster than the growth rate of silicon carbide in silicon particles. (C) 2003 Elsevier Science B.V. All rights reserved.