2015年5月
Non-equilibrium Green function simulations of graphene, silicene, and germanene nanoribbon field-effect transistors
J. Advanced Simulation in Science and Engineering
- ,
- ,
- 巻
- 2
- 号
- 1
- 開始ページ
- 171
- 終了ページ
- 177
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.15748/jasse.2.171
- 出版者・発行元
- 日本シミュレーション学会
Ballistic performance of graphene, silicene, and germanene-nanoribbon field-effect transistors (FETs) with a gate-length of 10 nm has been numerically investigated. The graphene-nanoribbon FET is found to have the largest ON-current when one compare FETs with a nanoribbon channel having a nearly equal band-gap Eg ≈ 0.5 eV. The graphene device exhibits the largest OFF-current due to the smallest effective-mass enhancing the source-drain direct tunneling.
- リンク情報
- ID情報
-
- DOI : 10.15748/jasse.2.171
- ISSN : 2188-5303
- CiNii Articles ID : 130005073844