Chisato Ogihara

Profile Information

Affiliation: Associate Professor, Quantum Devices and Materials Engineering Graduate School of Science and Engineering Materials Science and Engineering(Engineering) Graduate School of Science and Engineering(Engineering) YAMAGUCHI UNIVERSITY, Yamaguchi University
: Research Associate, Gifu University
: Research Assistant, University of Strathclyde

Degree: Doctor (Science)
Master (Science)

Researcher number: 90233444
J-GLOBAL ID: 200901025399106835
researchmap Member ID: 1000163980

External link

Research Interests

amorphous semiconductors

Research Areas

Natural sciences / Semiconductors, optical and atomic physics /

Research History

May, 2010 - Apr, 2016

Associate Professor, Graduate School of Science and Engineering(Engineering), YAMAGUCHI UNIVERSITY
Feb, 2010 - May, 2010

Graduate School of Science and Engineering(Engineering), YAMAGUCHI UNIVERSITY
Apr, 1991 - Sep, 1993

Research Associate, Gifu University
Apr, 1989 - Mar, 1991

Research Assistant, University of Strathclyde

Education

- Mar, 1988

Physics, Graduate School of Science, The University of Tokyo
- Mar, 1983

Department of Physics, Faculty of Science and Technology, Sophia University

Papers

Measurements of defect PL in a-Si:H by means of frequency resolved spectroscopy

C. Ogihara

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 28(10) 7121-7125, May, 2017 Peer-reviewed
Long-term metastability of light-induced defects in hydrogenated amorphous silicon

Kazuo Morigaki, Harumi Hikita, Chisato Ogihara

PHILOSOPHICAL MAGAZINE LETTERS, 96(5) 183-188, 2016 Peer-reviewed
Defects in hydrogenated amorphous silicon created by intense pulsed illumination at low temperature and the decay of their density

C. Ogihara, A. Nakayama, K. Yamaguchi, K. Morigaki

6TH INTERNATIONAL CONFERENCE ON OPTICAL, OPTOELECTRONIC AND PHOTONIC MATERIALS AND APPLICATIONS (ICOOPMA) 2014, 619 012016/1-012016/4, 2015 Peer-reviewed
Preparation condition and recombination rates at radiative defects in a-Si:H

Chisato Ogihara, Yuta Shintoku, Kei Yamaguchi, Kazuo Morigaki

CANADIAN JOURNAL OF PHYSICS, 92(7-8) 561-564, Jul, 2014 Peer-reviewed
Thermal quenching of defect photoluminescence and recombination rates of electron-hole pairs in a-Si:H

C. Ogihara, Y. Inagaki, A. Taketa, K. Morigaki

JOURNAL OF NON-CRYSTALLINE SOLIDS, 358(17) 2004-2006, Sep, 2012 Peer-reviewed
Temperature variation of non-radiative recombination rate in a-Si: H films

C. Ogihara, K. Morigaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12, 9(12) 2574-2577, 2012 Peer-reviewed
Light-induced effects on the radiative recombination rate of electron-hole pairs in a-Si:H

C. Ogihara, Y. Inagaki, K. Morigaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, 8(9) 2792-2795, 2011 Peer-reviewed
Lifetime distribution of photoluminescence and radiative recombination rate of electron-hole pairs in a-Si:H

Chisato Ogihara, Kazuo Morigaki

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4, 7(3-4) 662-665, 2010 Peer-reviewed
Temperature variation of radiative recombination rate of electron-hole pairs responsible for defect photoluminescence in a-Si:H

C. Ogihara, K. Morigaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 1, 6 S167-S170, 2009 Peer-reviewed
Analysis of lifetime distribution of defect luminescence in hydrogenated amorphous silicon

C. Ogihara, X. Yu, K. Morigaki

JOURNAL OF NON-CRYSTALLINE SOLIDS, 354(19-25) 2121-2125, May, 2008 Peer-reviewed
The kinetics of the light-induced defect creation in hydrogenated amorphous silicon - Stretched exponential relaxation

K. Morigaki, K. Takeda, H. Hikita, C. Ogihara, P. Roca i Cabarrocas

JOURNAL OF NON-CRYSTALLINE SOLIDS, 354(19-25) 2131-2134, May, 2008 Peer-reviewed
Light-induced defect creation under intense pulsed illumination in hydrogenated amorphous silicon

K. Morigaki, H.Hikita, C. Ogihara

Journal of Optoelectronics and Advanced Materials, 11 1-14, 2008 Peer-reviewed
Lifetime of defect luminescence in hydrogenated amorphous silicon

C. Ogihara, X. Yu, T. Nomiyama, H. Yamamoto, K. Morigaki

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 18 S103-S106, Oct, 2007 Peer-reviewed
Light-induced creation of defects related to low energy photoluminescence in hydrogenated amorphous silicon

C. Ogihara, T. Nomiyama, H. Yamamoto, K. Nakanishi, J. Harada, X. Yu, K. Morigaki

JOURNAL OF NON-CRYSTALLINE SOLIDS, 352(9-20) 1064-1067, Jun, 2006 Peer-reviewed
Light-induced effects on low energy photoluminescence in a-Si : H investigated by frequency-resolved spectroscopy

C Ogihara, T Yoshimura, Y Fujita, K Morigaki

JOURNAL OF NON-CRYSTALLINE SOLIDS, 338 452-455, Jun, 2004 Peer-reviewed
Optical absorption of nanometer-sized band-edge-modulated amorphous silicon-nitrogen films

M Yamaguchi, C Ogihara, K Morigaki

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 97(2) 135-140, Jan, 2003 Peer-reviewed
Light-induced defect creation under pulsed subbandgap illumination in hydrogenated amorphous silicon

K Morigaki, H Hikita, H Takemura, T Yoshimura, C Ogihara

PHILOSOPHICAL MAGAZINE LETTERS, 83(5) 341-349, 2003 Peer-reviewed
Electron spin resonance of band-edge modulated amorphous hydrogenated silicon nitride films

K Morigaki, M Yamaguchi, C Ogihara, Y Fujita

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 4(3) 563-568, Sep, 2002 Peer-reviewed
Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si : H

C Ogihara, H Takemura, T Yoshimura, K Morigaki

JOURNAL OF NON-CRYSTALLINE SOLIDS, 299 637-641, Apr, 2002 Peer-reviewed
Lifetime resolved study of photoluminescence under pulsed excitation in a-Si : H based films

H Takemura, C Ogihara, K Morigaki

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 71(2) 625-629, Feb, 2002 Peer-reviewed

Misc.

フォトルミネッセンスの寿命分解測定

荻原千聡

固体物理, 37 923-931, 2002
アモルファスシリコン系材料の周波数分解分光ルミネッセンス

荻原千聡

固体物理, 32(5) 417-424, 1997
27a-G-5 a-Si:H/a-Si_<1-x>N_x:H 超格子膜の光熱偏向分光法による吸収スペクトル

谷田部喜久雄, 太田洋, 山口政晃, 荻原千聡, 森垣和夫, 野々村修一, 仁田昌二

秋の分科会講演予稿集, 1987(2) 120-120, Sep 16, 1987
27a-G-4 一次元規則および不規則a-Si:H/a-Si_<1-x>N_x:H 多層膜のルミネッセンスとODMR

山口政晃, 太田洋, 荻原千聡, 森垣和夫, 野々村修一, 仁田昌二

秋の分科会講演予稿集, 1987(2) 120-120, Sep 16, 1987

Books and Other Publications

Light-Induced Defects in Semiconductors

K. Morigaki, H. Hikita, C. Ogihara (Role: Joint author)

Pan Stanford Publishing, 2015 (ISBN: 9789814411486)
Handbook of Electronic and Photonic Materials, edited by S. Kasap and P. Capper

K. Morigaki, C. Ogihara

Springer, 2006

Presentations

Energy distribution of defect luminescence in hydrogenated amorphous silicon

Chisato OGIHARA

Jan 22, 2022
Frequency resolved spectroscopy of PL in a-Si:H performed by using digital oscilloscope

Itsuki Michida, Sho Yamashita, Chisato Ogihara

Jan 17, 2020
Spectral dependence of radiative recombination rate of electron-hole pairs in a-Si:H

Mitsuki Harada, Shunya Kami, Chisato Ogihara

Jan 26, 2019
a-Si:Hにおける電子正孔の輻射再結合率の温度変化

于暁, 荻原千聡

日本物理学会講演概要集(第63回年次大会), Mar, 2008
Lifetime distribution of defect luminescence in hydrogenated amorphous silicon (II)

X. Yu, C. Ogihara

日本物理学会講演概要集(第62回年次大会), Sep, 2007
Lifetime distribution of defect luminescence in hydrogenated amorphous silicon (I)

X. Yu, J. Harada, K. Nakanishi, C. Ogihara

日本物理学会講演概要集(2007年春季大会), Mar, 2007
a-Si:H におけるフォトルミネッセンス寿命のスペクトル依存性(II)

中西研二, 原田潤一, 于暁, 荻原千聡

日本物理学会講演概要集(2006年秋季大会), Sep, 2006
a-Si:H におけるフォトルミネッセンス寿命のスペクトル依存性(I)

原田潤一, 中西研二, 于暁, 荻原千聡

日本物理学会講演概要集(2006年秋季大会), Sep, 2006
a-Si:H における発光欠陥に関連したフォトルミネッセンスと光誘起現象

荻原千聡, 于暁, 中西研二, 原田潤一, 野見山智宏, 山本尚史

日本物理学会講演概要集(第61回年次大会), Mar, 2006
Defect density and intensity of low-energy photoluminescence in a-Si:H films

X. Yu, H.Yamamoto, T. Nomiyama, K. Nakanishi, J. Harada, C. Ogihara

日本物理学会講演概要集(2005年秋季大会), Sep, 2005
a-Si:H膜における低エネルギールミネッセンスの寿命分布と欠陥密度

野見山智宏, 山尾正之, 原田潤一, 于暁, 荻原千聡

日本物理学会講演概要集(第60回年次大会), Mar, 2005
a-Si:H膜における低エネルギールミネッセンス強度の温度変化と欠陥密度

山本尚史, 中村健二, 中西研二, 荻原千聡

日本物理学会講演概要集(第60回年次大会), Mar, 2005
a-Si:H 膜のルミネッセンスの温度変化と光誘起欠陥生成

荻原千聡, 山本尚史, 野見山智宏, 中村健二, 山尾正之

日本物理学会講演概要集(2004年秋季大会), Sep, 2004
Si:H 膜の低エネルギールミネッセンスの温度変化

荻原千聡, 山本尚史, 野見山智宏

日本物理学会講演概要集(第59回年次大会), Mar, 2004
Si:H 膜における光誘起欠陥生成と低エネルギールミネッセンス

荻原千聡

日本物理学会講演概要集(2003 年秋季大会), Sep, 2003
a-Si:H系膜における低エネルギールミネッセンスの周波数分解分光

荻原千聡, 吉村泰一

日本物理学会講演概要集, Mar, 2003
a-Si:H系膜における光誘起欠陥生成と低エネルギールミネッセンスの寿命分解測定(II)

吉村泰一, 荻原千聡

日本物理学会講演概要集, Sep, 2002
a-Si:H 系膜における光誘起欠陥生成と低エネルギールミネッセンスの寿命分解測定

吉村泰一, 荻原千聡, 竹村仁志, 森垣和夫

日本物理学会講演概要集, Mar, 2002
a-Si:H 膜におけるパルス光照射による光誘起欠陥生成とフォトルミネッセンス

吉村泰一, 竹村仁志, 荻原千聡, 森垣和夫

日本物理学会講演概要集, Sep, 2001

Teaching Experience

Research Projects

The Investigation of Quantum Effects of Band-Edge Modulated Nano-Structure Noncrystalline

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 1998 - 1999

MORIGAKI Kazuo, OGIHARA Chisato, MORIGAKI Kazuo
Study of Quantum Effect in Amorphous Semiconductors of Nanometer Sized Structure

Grants-in-Aid for Scientific Research, Grant-in-Aid for General Scientific Research (C), Japan Society for the Promotion of Science, 1994 - 1995

OGIHARA Chisato, SHINOZUKA Yuzo, SUEOKA Osamu, MORIGAKI Kazuo
Studies on the Dynamical Properties of a-Si : H/a-Si3N4+x : H Interfaces by PLAS(Phptoluminescence Absorption Spectroscopy)

Grants-in-Aid for Scientific Research, Grant-in-Aid for General Scientific Research (C), Japan Society for the Promotion of Science, 1993 - 1994

NITTA Shoji, ITOH Takashi, NONOMURA Shuichi
水素化アモルファスシリコンの一次元系の作製とその物性の研究

科学研究費助成事業, 奨励研究(A), 日本学術振興会, 1993 - 1993

荻原千聡

Other

(No title)

1. 欠陥密度の異なる a-Si:H 系膜を作製し、ルミネッセンスの寿命分解測定を行う。 2. 光照射した a-Si:H 系膜についてルミネッセンスの寿命分解測定を行い、光照射前と比較する。 3. 共同研究者に電子スピン共鳴の測定を依頼して、欠陥の一つであるシリコンの中性ダングリングボンドの密度を測定する。 4. a-Si:H 系膜の光誘起生成欠陥の密度と低エネルギールミネッセンスの強度、寿命分布の関連を調べる。 5. a-Si:H 系膜の低エネルギールミネッセンスに関連する欠陥、電子状態および光照射による影響について考察し、光誘起現象について解明する。 以上いずれも一定の範囲で実施しているが、より詳しい情報を得るため今後も測定条件等の範囲を広げて継続する必要がる。

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