2002年4月
Lifetime and intensity of photoluminescence after light induced creation of dangling bonds in a-Si : H
JOURNAL OF NON-CRYSTALLINE SOLIDS
- ,
- ,
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- 巻
- 299
- 号
- 開始ページ
- 637
- 終了ページ
- 641
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/S0022-3093(01)01027-4
- 出版者・発行元
- ELSEVIER SCIENCE BV
The photo luminescence (PL) fatigue after illumination of pulsed laser light has been studied for a-Si:H films prepared by glow discharge decomposition. The densities of photocreated dangling bonds (DBs) in the a-Si:H films after illumination of sub-bandgap pulsed light were obtained from electron spin resonance (ESR) measurements as a function of illumination time, We have obtained the lifetime resolved PL in microsecond and millisecond regions for aSi:H films by means of frequency resolved spectroscopy (FRS) before and after the illumination. The decrease in the PL intensity was not so significant as expected from the DB density. We have not found sizable change of lifetime distribution of PL after the illumination. The results suggest inhomogencity of spatial distribution of photocreated DBs. (C) 2002 Elsevier Science B.V. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1016/S0022-3093(01)01027-4
- ISSN : 0022-3093
- Web of Science ID : WOS:000175757400127