本岡 輝昭

Supersonic-Free-Jet CVD Growth of Dy-doped Silicon Films for 1.3 Micron LED 

MRS Proceedings Volume 715, A9.4.1-6 2002年  

"Molecular-Dynamics Studies on Solid Phase Epitaxy of Guest-Free Silicon Clathrates" 

MRS Proceedings Volume 691, G14.5.1-6 2002年  

Field emission current from Si tip: ultra-fast time resolved measurementsﾓ 

Surface Science Vol. 515, pp. 369-376 2002年  

Hole Resonant Tunneling through SiC/Si-dot/SiC Heterostructures", 

Materials Science Forum 389-393, 751-754 2002年  

Atomic Diffusion at Solid/Liquid Interface of Silicon: Transition Layer and Defect Formation 

Phys. Rev. B65, 081304-081307 2002年  

Empirical potential description of energetics and thermodynamic properties in expanded-volume silicon clathrates 

Phys. Rev. B64, 195409-195415 2001年  

Formation and Current-Voltage Characteristics of SiC/Si-dot/SiC Resonant Tunneling Diodes(jointly worked) 

Solid State Phenomena 78-79 157 2001年  

Interface Effects on the Raman Spectra of Si/3C-SiC Superlattices(jointly worked) 

Mat. Res. Symp. Proc. 640 H5.38.1 2001年  

Epitaxial Growth of a Low-Density Framework Form of Crystalline Silicon : A Molecular-Dynamics Study(jointly worked) 

Phys. Rev. Lett. 86(21) 4879-4882 2001年  

Reply to"Comment on 'Molecular-dynamics simulations of solid-phase epitaxy of Si : Growth mechanisms') 

Phys. Rev. B 63 237402 2001年  

Surface Diffusivity Measurements on Boron Covered Silicon Surfaces by Field Emission(jointly worked) 

Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics 151 2001年  

Molecular dynamics simulations of defect formation during Si melt growth : A microscopic picture of V/G(jointly worked) 

Proc. of the Fifth Symp. on Atomic-scale Surface and Interface Dynamics 117 2001年  

CVD grown silicon thin films with high carbon concentration : morphology and self-assembly controlled by surface segregation(jointly worked) 

J. Cryst. Growth. 222(1/2) 1-8 2001年  

シリコン結晶成長の分子動力学シミュレーション 

19 100 2000年  

Strong interface-induced changes on the Raman scattering in Si/3C-SiC superlattices(jointly worked) 

Appl. Phys. Lett. 77(26) 4316-4318 2000年  

Molecular dynamics simulations of crystal growth from melted Si : Self-interstitial formation at the solid/liquid interface(jointly worked) 

Proc. of the 3rd Int. Symp. on Advanced Science and Technology of Silicon Materials 565 2000年  

Molecular dynamics simulations of solid phase epitaxy of Si : Growth mechanism and defect formation 

Mat. Res. Symp. Proc. 584 263 2000年  

Silicon surface diffusion studied by field emission current fluctuations method(jointly worked) 

Proc. of the Fourth Symp. on Atomic-scale Surface and Interface Dynamics 123 2000年  

Molecular dynamics simulations of self-interstitial formation processes during crystal growth from melted Si(jointly worked) 

Proc. of the Fourth Symp. on Atomic-scale Surface and Interface Dynamics 81 2000年