Susumu Horita

J-GLOBAL         Last updated: Sep 15, 2019 at 18:11
Susumu Horita
Japan Advanced Institute of Science and Technology
School of Materials Science, Department of Materials Science, School of Materials Science
Job title
Associate Professor
Dr.Eng. in Applied Electronics, Tokyo Institute of Technology(1987)

Research Areas


Academic & Professional Experience

Recturer (1988), Associate Professor (1992) at Kanazawa University

Committee Memberships

Japan Society of Applied Physics  Member
Surface Science Society of Japan  Member
Institute of Electronics Information and Communication Engineers in Japan  Member
MRS (Materials Research Society) in U.S.A.  Member

Awards & Honors

Dec 2013
Outstanding Poster Paper Award, The 20th International Display Workshops (IDW'13)
Dec 2003
Outstanding Poster Paper Award, 10th International Display Workshops

Published Papers

Sanjida Ferdous, Abu Bakar Md Ismail, Susumu Horita
International Conference on Computer, Communication, Chemical, Material and Electronic Engineering, IC4ME2 2018      Sep 2018
© 2018 IEEE. High quality silicon oxide (SiO2) films deposited at low-temperature (≤ 200 °C) are needed for TFTs (Thin Film Transistor) as gate dielectric material, inter layer dielectric, inter metal dielectric, etc. In this study, SiO2 films wer...
Hamada Hiroki, Horita Susumu, Furuta Mamoru, Kimura Mutsumi, Hattori Reiji
JAPANESE JOURNAL OF APPLIED PHYSICS   57(3)    Mar 2018   [Refereed]
Kuzuhara Masaaki, Ichikawa Musubu, Baba Akira, Fujisawa Hironori, Horita Susumu, Itoh Eiji, Kawae Takeshi, Kimura Mutsumi, Masuda Atsushi, Mori Tatsuo, Okada Hiroyuki, Suematsu Hisayuki, Suzuki Toshikazu, Tani Masahiko, Tsuboi Nozomu, Uchitomi Naotaka, Uraoka Yukiharu, Yamashita Ichiro
JAPANESE JOURNAL OF APPLIED PHYSICS   57(2)    Feb 2018   [Refereed]

Conference Activities & Talks

Reduction of Residual OH Content in a Low-temperature Si Oxide Film at less than 200 oC
Susumu Horita
The 25th International Display Workshops(IDW'18) in conjunction with Asia Display 2018   12 Dec 2018   
Room-Temperature Deposition of a Crystallized Dielectric YSZ Film on Glass Substrate Covered with Cellulose Nanopaper
Susumu Horita, Jyotish Patidar, Hitomi Yagyu, and Masaya Nogi
The 24th International Display Workshops(IDW'17) in conjunction with Asia Display 2017   6 Dec 2017   
Effect of Trichloroethene (TCE) on Deposition Rate and Film Quality of Low-Temperature SiO2 Films Grown Using Silicone Oil and Ozone Gas
Puneet Jain and Susumu Horita
The 24th Inter. Workshop on Active-Matrix Flat Panel Displays and Devices (AM-FPD 17   4 Jul 2017   
Progress of Low-Temperature Fabrication Technologies of Thin Film Transistors for Preservation of GlobalEnvironment [Invited]
Susumu Horita
Internationa Conference on Computer, Communication, Chemical, Materials & Electronic Engineering, IC4ME2   24 Mar 2016   
Low-Temperature Fabrication of Crystallized Si Films for Display and Solar Cell Applications [Invited]
Susumu Horita
2012 IEEE International Conference on Electronics Design, Systems and Applications, Abstract pp.19.   5 Nov 2012   

Teaching Experience


Research Grants & Projects

Fabrication of ferroelectric memory on Si substrate using intermediate electrode
Project Year: 1994   
By using our original memory structure, our memory shows nondestructive, nonvoltile, low operation voltage less than 3 V, and longer retention time than 10 years. Our memory has ferroelectric gate material and intemediate electrode between the fer...
Fabrication of low temperature poly-crystal Si film with controlled grain boundary location by a pulse laser beam on a glass substrate
Project Year: 1999   
Low temperature crystallization of a depositing Si film on a glass substrate covered with a poly-YSZ seed layer
Project Year: 1998   
Using a 100-nm-thick YSZ seed layer covering a glass substrate, we try to crystallize a Si film deposited on it at lower temperature than 400℃.
Formation of Si oxide film by using ozone and silicone oil at lower temperature less than 200℃
Project Year: 2003   
Using 5% ozone gas and silicone oil, we deposite silicon oxide film at lower temperature than 200℃. Silicone oil is cheap and safe material. The concentration of metallic impurity is less than detectable limit of SIMS and C concentration is as low...