論文

2019年6月

10W Class High Power C-Band Rectifier Using GaN HEMT

2019 IEEE Wireless Power Transfer Conference, WPTC 2019
  • Satoshi Yoshida
  • ,
  • Kenjiro Nishikawa
  • ,
  • Shigeo Kawasaki

開始ページ
595
終了ページ
598
記述言語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/WPTC45513.2019.9055692

© 2019 IEEE. This paper demonstrates fundamental evaluation results of a C-band rectifier using gallium nitride (GaN) high electron mobility transistor (HEMT). To achieve rectification at high power range, the GaN HEMT is utilized. TGF2023-2-05 of Qorvo is used for the HEMT. A rectifier circuit is designed on a RO4350B substrate. Only fundamental wave matching is considered. The designed rectifier is fabricated and measured. Maximum rectification efficiency of 44.8 % at 5.78 GHz while the load resistance is 20Omega is obtained from the measurement. Maximum output DC power is 9661 mW when RF input power is 44.2dBm.

リンク情報
DOI
https://doi.org/10.1109/WPTC45513.2019.9055692
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85083548755&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85083548755&origin=inward
ID情報
  • DOI : 10.1109/WPTC45513.2019.9055692
  • SCOPUS ID : 85083548755

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