論文

査読有り
2006年

Epitaxial growth of Cu nanodot arrays using an AAO template on a Si substrate

ELECTROCHEMICAL AND SOLID STATE LETTERS
  • T Shimizu
  • ,
  • M Nagayanagi
  • ,
  • T Ishida
  • ,
  • O Sakata
  • ,
  • T Oku
  • ,
  • H Sakaue
  • ,
  • T Takahagi
  • ,
  • S Shingubara

9
4
開始ページ
J13
終了ページ
J16
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1149/1.2176891
出版者・発行元
ELECTROCHEMICAL SOC INC

We established a method to clean the Si surface that exists at the bottom of anodic aluminum oxide (AAO) nanoholes after removal of the amorphous barrier layer, and we succeeded in the preparation of epitaxial Cu dot arrays on the Si surface in the nanoholes. The Si surfaces at the AAO nanohole bottoms were cleaned with dilute hydrofluoric acid after annealing at 900 degrees C in Ar ambient, and we sputtered Cu on the AAO template to form Cu dot arrays. This method for preparing nanohole arrays on a single crystalline substrate enables growth of a variety of highly regular epitaxial nanodot/wire arrays. (c) 2006 The Electrochemical Society.

Web of Science ® 被引用回数 : 17

リンク情報
DOI
https://doi.org/10.1149/1.2176891
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000235479800034&DestApp=WOS_CPL
ID情報
  • DOI : 10.1149/1.2176891
  • ISSN : 1099-0062
  • Web of Science ID : WOS:000235479800034

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