Thin films of the hematite-ilmenite solid solution (ot-Fe2O3-FeTiO3) are one of the candidates for practical magnetic semiconductors with a high Curie temperature (Tc). We have successfully prepared well-crystallized epitaxial Fe1.2Ti0.8O3 films on alpha-Al2O3 substrates by using a reactive helicon plasma sputtering technique. Only the films having the R3 symmetry had large ferrimagnetic moments, where the Fe-rich and the Ti-rich cation layers were alternately stacked along the c-axis. To obtain the order structure (R3) for the Fe1.2Ti0.8O3 films, a higher substrate temperature and/or post annealing at 600 degrees C were very effective. Unfortunately the Fe1.2Ti0.8O3 solution has the lower Tc of about 250 K in bulk form. Trying to raise up the Tc of Fe1.2Ti0.8O3 multilayered films of alpha-Fe2O3/Fe1.2Ti0.8O3 were also prepared. At the moment, though, we did not success the preparation of high-Tc multilayered films beyond the room temperature. Low temperature magnetization measurements and Mossbauer spectroscopy suggested that the exchange coupling between alpha-Fe2O3 and Fe1.2Ti0.8O3 seemed to provide a large possibility to increase the Tc of Fe1.2Ti0.8O3 layers beyond the room temperature.