MISC

査読有り
2016年11月21日

High aspect silicon structures using metal assisted chemical etching

16th International Conference on Nanotechnology - IEEE NANO 2016
  • N. V. Toan
  • ,
  • M. Toda
  • ,
  • T. Ono

開始ページ
720
終了ページ
723
DOI
10.1109/NANO.2016.7751348

© 2016 IEEE. This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.

リンク情報
DOI
https://doi.org/10.1109/NANO.2016.7751348
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85006853564&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=85006853564&origin=inward
ID情報
  • DOI : 10.1109/NANO.2016.7751348
  • ISBN : 9781509039142
  • SCOPUS ID : 85006853564

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