2016年11月21日
High aspect silicon structures using metal assisted chemical etching
16th International Conference on Nanotechnology - IEEE NANO 2016
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- 開始ページ
- 720
- 終了ページ
- 723
- DOI
- 10.1109/NANO.2016.7751348
© 2016 IEEE. This work reports on metal assisted chemical etching (MACE) for high aspect silicon structures. Ultra-high aspect trenches and pillars of 400 and 80, respectively, have been achieved by MACE. Additionally, a cantilever fabrication based on above pillars is demonstrated by using assembly technology. The pillars are assembled onto glass substrate and fixed by conductive glue. The fabricated cantilever shows a resonance frequency of 235 kHz and a quality factor of 800.
- リンク情報
- ID情報
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- DOI : 10.1109/NANO.2016.7751348
- ISBN : 9781509039142
- SCOPUS ID : 85006853564