2010年
S-parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification
2010 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS)
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- 記述言語
- 英語
- 掲載種別
- 研究発表ペーパー・要旨（国際会議）
- DOI
- 10.1109/CSICS.2010.5619657
- 出版者・発行元
- IEEE
A gallium nitride (GaN) Schottky diode on semi-insulating SiC has been developed for microwave power rectification. A 2 mu m x 100 mu m finger type diode shows ON resistance of 8.2 Omega and depletion capacitance of 0.36 pF at 0 V with breakdown voltage of 90 V. S-parameter analysis separated the ON resistance into the intrinsic part and the access region part, which will benefit device optimization. With a 10-finger diode, RF/DC conversion efficiency of 74.4% is obtained at input power of 5 W and frequency of 2.45 GHz.
- リンク情報
- ID情報
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- DOI : 10.1109/CSICS.2010.5619657
- ISSN : 1550-8781
- Web of Science ID : WOS:000286942400054