藤永 清久

An agent-based Scheduling Systems for Semiconductor Manufactering 

Proceedings of the 17th international confernce on Production Reseach No, 26 2003年  

Eleclrical inverstigation on low-prssure Chemical-vapor-deposited and therwal-Processed Si/SiGe on a SIMOX Substerte 

jourrnal of Vacuum Scienec and Technology B21(1) 320 2003年  

An agent-based Scheduling Systems for Semiconductor Wanufactering 

Proceedings of the 17th international confernce on Production Reseach No, 26 2003年  

Eleclrical inverstigation on low-prssure Chemical-vapor-deposited and therwal-Processed Si/SiGe on a SIMOX Substerte 

jourrnal of Vacuum Scienec and Technology B21(1) 320 2003年  

Agent-oriented Process Machine Schecluling in ASIC Wafer Production Iine 

Proceedings of the 4th Asia-Pacific Conference on Industrial Engineering and Managenents Systems 2002年  

Agent-oriented Process Machine Schecluling in ASIC Wafer Production Iine 

Proceedings of the 4th Asia-Pacific Conference on Industrial Engineering and Managenents Systems 2002年  

Photoluminescence of Si_0.83 Ge_0.17 quantum wells grown on (100) Si by low-pressure chemical vapor deposition. 

Japanese Journal of Applied Physics 34(2B) L213-L216 1995年  

Surface contamination and interface abruptness on Si/SiGe epitaxial layers related to vacuum quality of chemical vapor deposition. 

Japanese Journal of Applied Physics 34(8A) 4004-4009 1995年  

Epitaxial growth of B-doped Si_1-X Ge_X by Chemical vapor deposition using Si₂H₆, GeH₄, and B₂H₆ gases. 

Journal of the Electrochemical Society 140(7) 2081-2084 1993年  

半導体薬品の供給自動化 

ケミカル タイムズ (1-2) 2 1984年  

Automation of semiconductor-grade chemical solutions supply. 

The Chemical Times (1-2) 2 1984年  

Application of instrumental neutron activation analysis in C_Zochralski silicon crystal growth 

Journal of Radioanalytical Chemistry 162(1-2) 195  

Low-temperature hetero-epitaxy of Ge on Si by GeH₄ gas low-pressure chemical vapor deposition. 

Journal Vacuum Science and Technology B9(3) 1511